2018 | Catania HQ

Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, M Saggio

2018-09-20

Biblio references: Volume: 37 Pages: 127-190

Origin: Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications

Hot Electron Transistors with Graphene Base for THz Electronics

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Roy Dagher, Adrien Michon, Yvon Cordier

2018-08-06

Biblio references: Pages: 95-115

Origin: Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC (0001)

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo

2018-01-19

Biblio references: Pages: 123-154

Origin: Epitaxial Graphene on Silicon Carbide

Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Fabrizio Roccaforte, Rositza Yakimova

2018-01-19

Biblio references: Pages: 111-141

Origin: Epitaxial Graphene on Silicon Carbide

Structural and compositional investigation of high k praseodymium oxide rums deposited by MOCVD

R LoNigro, R Toro, G Malandrino, C Bongiorno, V Raineri, IL FragaHt

2018-01-10

Biblio references: Pages: 409-412

Origin: Microscopy of Semiconducting Materials 2003

Electrical characterization of high-efficiency bifacial silicon solar cells

F RICCO GALLUZZO, L Zumbo, G Adamo, A Parisi, M Caruso, C Gerardi, S Lombardo, R Miceli, A Busacca

2018-01-01

Biblio references:

Origin: Electrical characterization of high-efficiency bifacial silicon solar cells

Wide band gap Innovative SiC for Advanced Power (WInSiC4AP) a European project driving the future applications of SiC

L Liggio, A Imbruglia, M Saggio, M Cacciato, J Domingo Salvany, B Silvestre, S Reggiani, G Meneghesso, S Patanè, M Husak, MC Wurz, F Roccaforte, P Fiorenza, F La Via, A La Magna, X Pignat, O Metzelard, J Favre, F Di Leo, M Haug, JF Michaud, D Alquier, J Havlik, T Valentinetti, G Viano, G Russo

2018-01-01

Biblio references:

Origin: Proceedings of the European Conference on Silicon Carbide and Related Materials 2018 (ECSCRM2018)

Nuovi materiali polimerici porosi per la complessazione di arsenico dalle acque

Daniele Caretti, Stefano Scurti, Francesca Cunsolo, Tommaso Mecca, Martina Ussia, Sabrina Carroccio

2018-01-01

Biblio references: Pages: 223-224

Origin: Atti del XXIII Convegno di scienza e tecnologia delle macromolecole

Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

Hot Electron Transistors with Graphene Base for THz Electronics

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC (0001)

Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)

Structural and compositional investigation of high k praseodymium oxide rums deposited by MOCVD

Electrical characterization of high-efficiency bifacial silicon solar cells

Wide band gap Innovative SiC for Advanced Power (WInSiC4AP) a European project driving the future applications of SiC

Nuovi materiali polimerici porosi per la complessazione di arsenico dalle acque

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