2009 | Page 3 | Catania HQ

K Huet, Rong Lin, C Boniface, F Desse, Dirch Hjorth Petersen, Ole Hansen, N Variam, A La Magna, M Schuhmacher, A Jensen, PF Nielsen, H Besaucele, J Venturing

2009-01-01

Biblio references: Pages: 1-19

Origin: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

2009-01-01

Biblio references: Volume: 600 Pages: 123-126

Origin: Materials Science Forum

High quality single crystal 3C-SiC (111) films grown on Si (111)

Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E Saddow

2009-01-01

Biblio references: Volume: 615 Pages: 145-148

Origin: Materials Science Forum

Theoretical Monte Carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC

L’approccio narrativo nella formazione degli studenti infermieri: valutazione di un’esperienza

Defects in High Energy Ion Irradiated 4H-SiC

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Exposure of the hybrid detector of the Pierre Auger Observatory

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

High quality single crystal 3C-SiC (111) films grown on Si (111)

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