2009 | Page 5 | Catania HQ

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore di Franco, Valeria Puglisi, Vito Raineri

2009-01-01

Biblio references: Volume: 600 Pages: 1341-1344

Origin: Materials Science Forum

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

2009-01-01

Biblio references: Volume: 600 Pages: 123-126

Origin: Materials Science Forum

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

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Scientific Productions

Units in Italy

Contact info

Link Utili

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Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili