Conferences | Page 18

Ruggero Anzalone, Marco Salanitri, Simona Lorenti, Alberto Campione, Nicolò Piluso, Francesco La Via, Patrick Fiorenza, Cinzia M Marcellino, Giuseppe Arena, Salvo Coffa

2016-01-01

Biblio references: Volume: 858 Pages: 197-200

Origin: Materials Science Forum

Voids-free 3C-SiC/Si interface for high quality epitaxial layer

Ruggero Anzalone, Nicolò Piluso, Riccardo Reitano, Alessandra Alberti, Patrick Fiorenza, Marco Salanitri, Andrea Severino, Simona Lorenti, Giuseppe Arena, Salvo Coffa, Francesco La Via

2016-01-01

Biblio references: Volume: 858 Pages: 159-162

Origin: Materials Science Forum

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Stefania Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

2016-01-01

Biblio references: Volume: 858 Pages: 380-383

Origin: Materials Science Forum

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)

Filippo Giannazzo, Giuseppe Nicotra, Ioannis Deretzis, Aurora Piazza, Gabriele Fisichella, S Agnello, Corrado Spinella, Antonino La Magna, Fabrizio Roccaforte, Rositza Yakimova

2016-01-01

Biblio references: Volume: 858 Pages: 1129-1132

Origin: Materials Science Forum

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 705-708

Origin: Materials Science Forum

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Fabrication of Nanostructured Ni and Ni-Pd electrodes for wateralkaline electrolyzer

The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Voids-free 3C-SiC/Si interface for high quality epitaxial layer

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

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