Conferences | Page 18

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 701-704

Origin: Materials Science Forum

In liquid’laser modification and photocatalytic water splitting activity of TiO2 nanoparticles

G Compagnini, S Scalese

2016-01-01

Biblio references:

Origin: 4th Conference on Advanced Nanoparticle Generation and Excitation by Lasers in Liquids (ANGEL)

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Stefania Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

2016-01-01

Biblio references: Volume: 858 Pages: 380-383

Origin: Materials Science Forum

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Corrado Bongiorno, Roberto Modica, Salvatore Marchese, Paolo Badalà, Denise Calì, Francesco Patanè, Beatrice Carbone, Alfio Russo, Salvo Coffa

2016-01-01

Biblio references: Volume: 858 Pages: 1015-1018

Origin: Materials Science Forum

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 705-708

Origin: Materials Science Forum

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Ruggero Anzalone, Marco Salanitri, Simona Lorenti, Alberto Campione, Nicolò Piluso, Francesco La Via, Patrick Fiorenza, Cinzia M Marcellino, Giuseppe Arena, Salvo Coffa

2016-01-01

Biblio references: Volume: 858 Pages: 197-200

Origin: Materials Science Forum

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Marilena Vivona, Patrick Fiorenza, Tomasz Sledziewski, Alexandra Gkanatsiou, Michael Krieger, Thierry Chassagne, Marcin Zielinski, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 663-666

Origin: Materials Science Forum

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Philipp Schuh, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

2016-01-01

Biblio references: Volume: 858 Pages: 89-92

Origin: Materials Science Forum

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Giuseppe Greco, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Domenico Corso, Emanuele Smecca, Alessandra Alberti, Alfonso Patti, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 1170-1173

Origin: Materials Science Forum

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

2016-01-01

Biblio references: Volume: 858 Pages: 151-154

Origin: Materials Science Forum

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

In liquid’laser modification and photocatalytic water splitting activity of TiO2 nanoparticles

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

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