Conferences | Page 18

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

2016-01-01

Biblio references: Volume: 858 Pages: 151-154

Origin: Materials Science Forum

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo, Giuseppe Nicotra, Fabrizio Roccaforte, Corrado Spinella, Rositza Yakimova

2016-01-01

Biblio references: Volume: 858 Pages: 1121-1124

Origin: Materials Science Forum

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

Antonella Sciuto, Massimo Mazzillo, Salvatore Di Franco, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 1019-1022

Origin: Materials Science Forum

Stacking Fault Analysis of Epitaxial 3C-SiC on Si (001) Ridges

Mojmír Meduňa, Thomas Kreiliger, Ivan Prieto, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

2016-01-01

Biblio references: Volume: 858 Pages: 147-150

Origin: Materials Science Forum

In liquid’laser modification and photocatalytic water splitting activity of TiO2 nanoparticles

G Compagnini, S Scalese

2016-01-01

Biblio references:

Origin: 4th Conference on Advanced Nanoparticle Generation and Excitation by Lasers in Liquids (ANGEL)

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Corrado Bongiorno, Roberto Modica, Salvatore Marchese, Paolo Badalà, Denise Calì, Francesco Patanè, Beatrice Carbone, Alfio Russo, Salvo Coffa

2016-01-01

Biblio references: Volume: 858 Pages: 1015-1018

Origin: Materials Science Forum

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Marilena Vivona, Patrick Fiorenza, Tomasz Sledziewski, Alexandra Gkanatsiou, Michael Krieger, Thierry Chassagne, Marcin Zielinski, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 663-666

Origin: Materials Science Forum

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Philipp Schuh, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

2016-01-01

Biblio references: Volume: 858 Pages: 89-92

Origin: Materials Science Forum

Ion implantation defects in 4H-SiC DIMOSFET

Enzo Fontana, Nicolò Piluso, Alfio Russo, Simona Lorenti, Cinzia M Marcellino, Salvo Coffa, Francesco La Via

2016-01-01

Biblio references: Volume: 858 Pages: 418-421

Origin: Materials Science Forum

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Antonino Parisi, Santo Reina, Alfonso Patti, Fabrizio Roccaforte

2016-01-01

Biblio references: Volume: 858 Pages: 1178-1181

Origin: Materials Science Forum

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

Stacking Fault Analysis of Epitaxial 3C-SiC on Si (001) Ridges

In liquid’laser modification and photocatalytic water splitting activity of TiO2 nanoparticles

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Ion implantation defects in 4H-SiC DIMOSFET

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

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Scientific Productions

Units in Italy

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