Conferences | Page 47

Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide

J Buckley, G Molas, M Gély, F Martin, B De Salvo, S Deleonibus, G Pananakakis, C Bongiorno, S Lombardo

2006-09-19

Biblio references: Pages: 246-249

Origin: 2006 European Solid-State Device Research Conference

PZT Films on Wafers and Fibers for MEMS Application

Ratnesh Thapliyal, Aude Pellision, Dmitry Logvinovich, Martin Amberg, Hans Josef Hug, Giuseppino Fortunato

2006-07-30

Biblio references: Pages: 336-339

Origin: 2006 15th ieee international symposium on the applications of ferroelectrics

Dedicated Instrumentation for Single-Electron Effects Detection in Si Nanocrystal Memories

C Pace, F Crupi, S Lombardo, G Giusi

2006-04-24

Biblio references: Pages: 1856-1859

Origin: 2006 IEEE Instrumentation and Measurement Technology Conference Proceedings

Design of a RCE photodetectors based on the internal photoemission effect

M Casalino, L Sirleto, L Moretti, S Libertino, I Rendina

2006-04-20

Biblio references: Volume: 6183 Pages: 61831Y

Origin: Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits

SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor

Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

2006-01-01

Biblio references: Volume: 527 Pages: 179-182

Origin: Materials science forum

Epitaxial layers grown with HCl addition: a comparison with the standard process

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

2006-01-01

Biblio references: Volume: 527 Pages: 163-166

Origin: Materials science forum

Optimisation of epitaxial layer growth by Schottky diodes electrical characterization

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

2006-01-01

Biblio references: Volume: 527 Pages: 199-202

Origin: Materials science forum

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

J Buckley, M Bocquet, G Molas, M Gely, P Brianceau, N Rochat, E Martinez, F Martin, H Grampeix, JP Colonna, V Vidal, Cédric Leroux, G Ghibaudo, G Pananakakis, C Bongiorno, D Corso, S Lombardo, B Desalvo

2006-01-01

Biblio references: Pages: XX

Origin: NVMsIEDM 2006

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Vito Raineri, Fabrizio Roccaforte, Sebania Libertino, Alfonso Ruggiero, V Massimino, Lucia Calcagno

2006-01-01

Biblio references: Volume: 527 Pages: 1167-1170

Origin: Materials science forum

Diagnosi precoce di siringocele in età pediatrica: caso clinico

MG Scuderi, E Pappalardo, S Arena, A Benedetto, Di BENEDETTO V

2006-01-01

Biblio references: Pages: ---

Origin: XXXVII Congresso della Società Italiana di Chirurgia Pediatrica.

Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide

PZT Films on Wafers and Fibers for MEMS Application

Dedicated Instrumentation for Single-Electron Effects Detection in Si Nanocrystal Memories

Design of a RCE photodetectors based on the internal photoemission effect

SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor

Epitaxial layers grown with HCl addition: a comparison with the standard process

Optimisation of epitaxial layer growth by Schottky diodes electrical characterization

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Diagnosi precoce di siringocele in età pediatrica: caso clinico

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