Conferences | Page 33

Understanding dark current in pixels of silicon photomultipliers

R Pagano, S Lombardo, S Libertino, G Valvo, G Condorelli, B Carbone, DN Sanfilippo, G Fallica

2010-09-14

Biblio references: Pages: 265-268

Origin: 2010 Proceedings of the European Solid State Device Research Conference

Compact instrumentation for radiation tolerance test of flash memories in space environment

Calogero Pace, Ernesto Della Sala, Giuseppe Capuano, Sebania Libertino, Isodiana Crupi, Antonio Marino, Salvatore Lombardo, Michael Lisiansky, Yakov Roizin

2010-05-03

Biblio references: Pages: 652-655

Origin: 2010 IEEE Instrumentation & Measurement Technology Conference Proceedings

Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming

G Gay, G Molas, M Bocquet, E Jalaguier, M Gély, L Masarotto, JP Colonna, H Grampeix, F Martin, P Brianceau, V Vidal, R Kies, C Bongiorno, S Lombardo, T Baron, G Ghibaudo, B De Salvo

2010-04-26

Biblio references: Pages: 54-55

Origin: Proceedings of 2010 International Symposium on VLSI Technology, System and Application

Dark count in single photon avalanche Si detectors

R Pagano, S Libertino, G Valvo, G Condorelli, B Carbone, A Piana, M Mazzillo, DN Sanfilippo, GG Fallica, G Falci, S Lombardo

2010-02-25

Biblio references: Volume: 7598 Pages: 75980Z

Origin: Optical Components and Materials VII

Preliminary radiation hardness tests of single photon Si detectors

R Pagano, S Libertino, G Valvo, G Condorelli, B Carbone, A Piana, M Mazzillo, DN Sanfilippo, PG Fallica, F Principato, G Cannella, G Falci, S Lombardo

2010-02-16

Biblio references: Volume: 7606 Pages: 760607

Origin: Silicon Photonics V

Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Sushant Sonde, Filippo Giannazzo, Jean Roch Huntzinger, Antoine Tiberj, Mikael Syväjärvi, Rositza Yakimova, Vito Raineri, Jean Camassel

2010-01-01

Biblio references: Volume: 645 Pages: 607-610

Origin: Materials Science Forum

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

2010-01-01

Biblio references: Volume: 645 Pages: 713-716

Origin: Materials Science Forum

Study of the evolution of basal plane dislocations during epitaxial growth: role of the surface kinetics

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

2010-01-01

Biblio references: Volume: 645 Pages: 539-542

Origin: Materials Science Forum

Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

2010-01-01

Biblio references: Volume: 156 Pages: 305-311

Origin: Solid State Phenomena

Single Shockley faults enlargement during micro-photoluminescence defects mapping

Andrea Canino, Massimo Camarda, Francesco La Via

2010-01-01

Biblio references: Volume: 645 Pages: 555-558

Origin: Materials Science Forum

Understanding dark current in pixels of silicon photomultipliers

Compact instrumentation for radiation tolerance test of flash memories in space environment

Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming

Dark count in single photon avalanche Si detectors

Preliminary radiation hardness tests of single photon Si detectors

Uniformity of Epitaxial Graphene on On-axis and Off-axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Study of the evolution of basal plane dislocations during epitaxial growth: role of the surface kinetics

Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene

Single Shockley faults enlargement during micro-photoluminescence defects mapping

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