Conferences | Page 36

From atomistic to device level investigation of hybrid redox molecular/silicon field-effect memory devices

J Buckley, T Pro, R Barattin, A Calborean, K Huang, V Aiello, G Nicotra, M Gely, G Delapierre, E Jalaguier, F Duclairoir, N Chevalier, D Mariolle, C Spinella, S Lombardo, P Blaise, P Maldivi, G Ghibaudo, R Baptist, B De Salvo

2009-05-10

Biblio references: Pages: 1-4

Origin: 2009 IEEE International Memory Workshop

Performance and reliability of Si-nanocrystal double layer memory devices with high-k control dielectrics

G Gay, G Molas, M Bocquet, E Jalaguier, M Gely, L Masarotto, JP Colonna, H Grampeix, F Martin, P Brianceau, V Vidal, R Kies, K Yckache, B De Salvo, G Ghibaudo, T Baron, C Bongiorno, S Lombardo

2009-05-10

Biblio references: Pages: 1-4

Origin: 2009 IEEE International Memory Workshop

Thick epitaxial layers growth by chlorine addition

Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa

2009-01-01

Biblio references: Volume: 615 Pages: 55-60

Origin: Materials Science Forum

Defects in High Energy Ion Irradiated 4H-SiC

Gaetano Izzo, Grazia Litrico, Andrea Severino, Gaetano Foti, Francesco La Via, Lucia Calcagno

2009-01-01

Biblio references: Volume: 615 Pages: 397-400

Origin: Materials Science Forum

Nanoscale current transport at graphene/SiC interface by scanning probe microscopy

S Sonde, F Giannazzo, V Raineri, Rositza Yakimova, Jean Camassel

2009-01-01

Biblio references:

Origin: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09)

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri

2009-01-01

Biblio references: Volume: 615 Pages: 967-970

Origin: Materials Science Forum

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

2009-01-01

Biblio references: Volume: 600 Pages: 123-126

Origin: Materials Science Forum

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

Micro-Raman investigation of few graphene layers grown on 6H-SiC

Jean Camassel, Jean Roch Huntzinger, Antoine Tiberj, M Syväjärvi, Rositza Yakimova, F Giannazzo

2009-01-01

Biblio references:

Origin: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09)

Residual stress measurement on hetero-epitaxial 3C-SiC films

Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E Saddow, Francesco La Via, Giuseppe D'Arrigo

2009-01-01

Biblio references: Volume: 615 Pages: 629-632

Origin: Materials Science Forum

From atomistic to device level investigation of hybrid redox molecular/silicon field-effect memory devices

Performance and reliability of Si-nanocrystal double layer memory devices with high-k control dielectrics

Thick epitaxial layers growth by chlorine addition

Defects in High Energy Ion Irradiated 4H-SiC

Nanoscale current transport at graphene/SiC interface by scanning probe microscopy

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Micro-Raman investigation of few graphene layers grown on 6H-SiC

Residual stress measurement on hetero-epitaxial 3C-SiC films

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