Conferences | Page 38

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore di Franco, Valeria Puglisi, Vito Raineri

2009-01-01

Biblio references: Volume: 600 Pages: 1341-1344

Origin: Materials Science Forum

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping

Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte

2009-01-01

Biblio references: Volume: 615 Pages: 417-422

Origin: Materials Science Forum

Defects in High Energy Ion Irradiated 4H-SiC

Gaetano Izzo, Grazia Litrico, Andrea Severino, Gaetano Foti, Francesco La Via, Lucia Calcagno

2009-01-01

Biblio references: Volume: 615 Pages: 397-400

Origin: Materials Science Forum

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 243-246

Origin: Materials Science Forum

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri

2009-01-01

Biblio references: Volume: 615 Pages: 967-970

Origin: Materials Science Forum

Micro-Raman investigation of few graphene layers grown on 6H-SiC

Jean Camassel, Jean Roch Huntzinger, Antoine Tiberj, M Syväjärvi, Rositza Yakimova, F Giannazzo

2009-01-01

Biblio references:

Origin: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09)

Residual stress measurement on hetero-epitaxial 3C-SiC films

Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E Saddow, Francesco La Via, Giuseppe D'Arrigo

2009-01-01

Biblio references: Volume: 615 Pages: 629-632

Origin: Materials Science Forum

Towards Large Area (111) 3C-SiC Films Grown on off-oriented (111) Si

Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, M Italia, Giuseppe Abbondanza, Massimo Camarda, LMS Perdicaro, Giuseppe Condorelli, Marco Mauceri, Francesco La Via

2009-01-01

Biblio references: Volume: 615 Pages: 149-152

Origin: Materials Science Forum

High quality single crystal 3C-SiC (111) films grown on Si (111)

Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E Saddow

2009-01-01

Biblio references: Volume: 615 Pages: 145-148

Origin: Materials Science Forum

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

2009-01-01

Biblio references: Volume: 600 Pages: 603-606

Origin: Materials Science Forum

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping

Defects in High Energy Ion Irradiated 4H-SiC

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

Micro-Raman investigation of few graphene layers grown on 6H-SiC

Residual stress measurement on hetero-epitaxial 3C-SiC films

Towards Large Area (111) 3C-SiC Films Grown on off-oriented (111) Si

High quality single crystal 3C-SiC (111) films grown on Si (111)

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

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