Conferences | Page 9

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Andrea Severino, Domenico Mello, Simona Boninelli, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

2019-01-01

Biblio references: Volume: 963 Pages: 407-411

Origin: Materials Science Forum

Wireless sensor networks and flexible electronics as innovative solution for smart greenhouse monitoring in long-term space missions

Davide Polese, Luca Maiolo, Luca Pazzini, Guglielmo Fortunato, Alessio Mattoccia, Pier Gianni Medaglia

2019-01-01

Biblio references: Pages: 223-226

Origin: 2019 IEEE 5th International Workshop on Metrology for AeroSpace (MetroAeroSpace)

Real time ATP bioluminescence monitoring on 3D printed LoC by highly sensitive SiPM

MF Santangelo, Wing Cheung Mak, Daniel Filippini, D Corso, APF Turner, S Libertino

2019-01-01

Biblio references:

Origin: Optical Microsystems OµS19, Anacapri, Island of Capri, Italy, 9-11 September, 2019

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Salvatore Di Franco, Domenico Corso, Patrick Fiorenza, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 485-489

Origin: Materials Science Forum

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Eric G Barbagiovanni, Alessandra Alberti, Corrado Bongiorno, Emanuele Smecca, Massimo Zimbone, Ruggero Anzalone, Grazia Litrico, Marco Mauceri, Antonino La Magna, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 346-349

Origin: Materials Science Forum

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Fan Li, Valdas Jokubavicius, Michael R Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A Mawby, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 353-356

Origin: Materials Science Forum

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 479-482

Origin: Materials Science Forum

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 91-96

Origin: Materials Science Forum

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Michele Cascio, Ioannis Deretzis, Giuseppe Fisicaro, Giuseppe Falci, Giovanni Mannino, Antonino La Magna

2019-01-01

Biblio references: Volume: 12 Issue: 1 Pages: 32

Origin: Multidisciplinary Digital Publishing Institute Proceedings

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 91-96

Origin: Materials Science Forum

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Wireless sensor networks and flexible electronics as innovative solution for smart greenhouse monitoring in long-term space missions

Real time ATP bioluminescence monitoring on 3D printed LoC by highly sensitive SiPM

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Tailoring Active Defect Centers During the Growth of Group IV Crystals

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

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Scientific Productions

Units in Italy

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