Conferences | Page 5

Molecular dynamics simulations supporting the development of a continuum model of heat transport in nanowires

Igor Bejenari, Alexander Burenkov, Peter Pichler, Ioannis Deretzis, Alberto Sciuto, Antonino La Magna

2021-09-23

Biblio references: Pages: 1-6

Origin: 2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

Surface plasmon resonances in silicon nanowires with varying geometry

Giovanni Borgh, Corrado Bongiorno, Antonino La Magna, Giovanni Mannino, Salvatore Patanè, Alireza Shabani, Jost Adam, Rosaria Puglisi

2021-09-20

Biblio references:

Origin: European Materials Research Society 2021 Fall Meeting: Symposium R: Nanomaterials-electronics &-photonics

Failure Strength Weibull Analysis of 4H-SiC Die through a 3-PB test

Antonio Landi, Aye Aye Mon, Laura Liaci, Alessandro Sitta, Michele Calabretta, Antonella Sciuto, Giuseppe D’Arrigo, Marco Renna, Vincenzo Vinciguerra

2021-04-19

Biblio references: Pages: 1-6

Origin: 2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

Patrick Fiorenza, Salvatore Adamo, MS Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

2021-03-21

Biblio references: Pages: 1-6

Origin: 2021 IEEE International Reliability Physics Symposium (IRPS)

Study of the surface plasmon resonances in silicon nanowires with diameters less than 100 nm

Giovanni Borgh, Corrado Bongiorno, Antonino La Magna, Giovanni Mannino, Salvatore Patanè, Jost Adam, Rosaria Anna Puglisi

2021-01-01

Biblio references:

Origin: MRS-Materials Research Society Spring Meeting & Exhibit 2021

Modeling of virgin state and forming operation in embedded phase change memory (PCM)

MATTEO Baldo, O Melnic, M Scuderi, G Nicotra, M Borghi, E Petroni, A Motta, P Zuliani, A Redaelli, D Ielmini

2020-12-12

Biblio references: Pages: 13.3. 1-13.3. 4

Origin: 2020 IEEE International Electron Devices Meeting (IEDM)

Study of behavior of p-gate in Power GaN under positive voltage

Maurizio Moschetti, Cristina Miccoli, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Santo Reina, Antonino Parisi, Ferdinando Iucolano

2020-11-18

Biblio references: Pages: 1-6

Origin: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)

The" first and euRopEAn siC eighT Inches pilOt liNe": a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing …

Angelo Alberto Messina, Antonio Imbruglia, Michele Calabretta, Vincenzo Vinciguerra, Calin Constantin Moise, Alessandro Sitta, Marius Enachescu, Fabrizio Roccaforte

2020-11-18

Biblio references: Pages: 1-6

Origin: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)

Modeling the Optical Properties of Manganese Bismuth Co-Doped Perovskites

Damiano Ricciarelli

2020-09-04

Biblio references:

Origin: Proceedings of Internet Conference on Theory and Computation of Halide Perovskites (ComPer)

Electrical characterization of gate oxide current in a silicon power MOS subjected to uniaxial mechanical stress

Lorenzo Maurizio Selgi, Antonella Sciuto, Michele Calabretta, Alessandro Sitta, Giuseppe D'Arrigo

2020-09-01

Biblio references: Volume: 1 Pages: 365-370

Origin: 2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)

Molecular dynamics simulations supporting the development of a continuum model of heat transport in nanowires

Surface plasmon resonances in silicon nanowires with varying geometry

Failure Strength Weibull Analysis of 4H-SiC Die through a 3-PB test

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

Study of the surface plasmon resonances in silicon nanowires with diameters less than 100 nm

Modeling of virgin state and forming operation in embedded phase change memory (PCM)

Study of behavior of p-gate in Power GaN under positive voltage

The" first and euRopEAn siC eighT Inches pilOt liNe": a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing …

Modeling the Optical Properties of Manganese Bismuth Co-Doped Perovskites

Electrical characterization of gate oxide current in a silicon power MOS subjected to uniaxial mechanical stress

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