Conferences | Page 3

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Fan Li, Valdas Jokubavicius, Michael R Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A Mawby, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 353-356

Origin: Materials Science Forum

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 479-482

Origin: Materials Science Forum

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 91-96

Origin: Materials Science Forum

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 91-96

Origin: Materials Science Forum

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Michele Cascio, Ioannis Deretzis, Giuseppe Fisicaro, Giuseppe Falci, Giovanni Mannino, Antonino La Magna

2019-01-01

Biblio references: Volume: 12 Issue: 1 Pages: 32

Origin: Multidisciplinary Digital Publishing Institute Proceedings

Thermal Annealing of High Dose P Implantation in 4H-SiC

Cristiano Calabretta, Massimo Zimbone, Eric G Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 399-402

Origin: Materials Science Forum

Thermal Annealing of High Dose P Implantation in 4H-SiC

Cristiano Calabretta, Massimo Zimbone, Eric G Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via

2019-01-01

Biblio references: Volume: 963 Pages: 399-402

Origin: Materials Science Forum

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

2019-01-01

Biblio references: Volume: 963 Pages: 149-152

Origin: Materials Science Forum

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

2019-01-01

Biblio references: Volume: 963 Pages: 149-152

Origin: Materials Science Forum

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 230-235

Origin: Materials Science Forum

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Tailoring Active Defect Centers During the Growth of Group IV Crystals

Thermal Annealing of High Dose P Implantation in 4H-SiC

Thermal Annealing of High Dose P Implantation in 4H-SiC

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

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