Conferences | Page 8

The AMPERE project: development of innovative European heterojunction bifacial cell and module technology in an industrial automated manufacturing plant

C Gerardi, C Colletti, F Bizzarri, B Strahm, A Richter, D Munoz, M Izzi, J Levrat, C Ballif, O Nielsen, B Hartlin, B Melzer, M Tallian, S Lombardo, M Balucani, J Rentsch

2019-06-16

Biblio references: Pages: 0508-0510

Origin: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

A new model for predicting bifacial PV modules performance: first validation results

Fabio Ricco Galluzzo, Andrea Canino, Cosimo Gerardi, Salvatore A Lombardo

2019-06-16

Biblio references: Pages: 1293-1297

Origin: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Impact of solidification velocity on activation of Ga, In, and Al segregated in high Ge content SiGe by UV melt laser anneal

Toshiyuki Tabata, Joris Aubin, Karim Huet, Fulvio Mazzamuto, Antonino La Magna, Leonard M Rubin, Petros Kopalidis, Hao-Cheng Tsai, Dwight Roh, Ronald Reece

2019-03-12

Biblio references: Pages: 130-132

Origin: 2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Full non-destructive characterization of doped optical fiber preforms

Marilena Vivona, Michalis N Zervas

2019-03-07

Biblio references: Volume: 10897 Pages: 108970C

Origin: Fiber Lasers XVI: Technology and Systems

Innovative Lab-on-Disk Technology for Rapid and Integrated Analysis of Pathogen Nucleic Acids

Emanuele L Sciuto, Salvatore Petralia, Sabrina Conoci

2019-02-11

Biblio references: Pages: 215-220

Origin: AISEM Annual Conference on Sensors and Microsystems

Computational Modelling of Defect Chemistry of Tin Halide Perovskites for Solar Cells Applications

Damiano Ricciarelli, Daniele Meggiolaro, Filippo De Angelis

2019-02-11

Biblio references:

Origin: Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

2019-01-01

Biblio references: Volume: 963 Pages: 149-152

Origin: Materials Science Forum

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

2019-01-01

Biblio references: Volume: 963 Pages: 149-152

Origin: Materials Science Forum

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte

2019-01-01

Biblio references: Volume: 963 Pages: 230-235

Origin: Materials Science Forum

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Andrea Severino, Domenico Mello, Simona Boninelli, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

2019-01-01

Biblio references: Volume: 963 Pages: 407-411

Origin: Materials Science Forum

The AMPERE project: development of innovative European heterojunction bifacial cell and module technology in an industrial automated manufacturing plant

A new model for predicting bifacial PV modules performance: first validation results

Impact of solidification velocity on activation of Ga, In, and Al segregated in high Ge content SiGe by UV melt laser anneal

Full non-destructive characterization of doped optical fiber preforms

Innovative Lab-on-Disk Technology for Rapid and Integrated Analysis of Pathogen Nucleic Acids

Computational Modelling of Defect Chemistry of Tin Halide Perovskites for Solar Cells Applications

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

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