Salvatore Ethan Panasci, Antonino Alessi, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Emanuela Schilirò, Filippo Giannazzo, Simonpietro Agnello

Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation

physica status solidi (a) [], Volume: 219 Issue: 21 Pages: 2200096

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced Materials Interfaces [], Pages: 2201502

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Ethan Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520

Filippo Giannazzo, Salvatore E Panasci, Emanuela Schilirò, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287

Salvatore E Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182

SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, F Giannazzo, S Agnello

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E Panasci, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Fabrizio Roccaforte, Filippo Giannazzo

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

arXiv preprint arXiv:2108.09542 [],

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259

L Seravalli, M Bosi, P Fiorenza, SE Panasci, D Orsi, E Rotunno, L Cristofolini, F Rossi, F Giannazzo, F Fabbri

Gold nanoparticle assisted synthesis of MoS 2 monolayers by chemical vapor deposition

Nanoscale Advances [Royal Society of Chemistry], Volume: 3 Issue: 16 Pages: 4826-4833

E Schilirò, R Lo Nigro, SE Panasci, FM Gelardi, S Agnello, Rositsa Yakimova, F Roccaforte, F Giannazzo

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon [Pergamon], Volume: 169 Pages: 172-181

F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, F Roccaforte, S Agnello, J Brault, Y Cordier, A Michon

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705