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Alessandra Alberti was born in 1972. She received the Master degree in Physics in 1996, (cum laude) and the Ph.D degree in Physics in 1999 (cum laude). From January 2001 she has got a permanent position as researcher at the Institute for Microelectronics and Microsystems of the National Research Council in Catania (CNR-IMM).
She is in charge of the following methodologies and equipments:
- Advanced Magnetron-Sputtering to grow metals, oxides and nitrides: Ni, Ti, Al, Ni/Co-silicides, TiO2, ZnO:Al, NiO, Al2O3, TiN, AlN.Current main focus resides on the growth of mesoporous materials for hybrid photovoltaics and sensors applications; and on metallization schemes for Si, SiC, GaN -based devices, comprised silicides
- Multiple-source Sublimation to grow solvent-free and stable Photoactive Hybrid Perovskites. The current main focus is on the optimization of the structural, optical and electrical performances of photoactive Perovskite materials and on their integration into solar devices.
- High Resolution X-Ray Diffraction (XRD) for poly, single-crystalline and multi-layered materials’ analyses; X-Ray Reflectivity (XRR) applied to thin layer (<200nm); in situ and under operation analyses under controlled environment and temperature conditions.
With several financed projects, she leads the research activities at CNR-IMM on Solar Cells based on Hybrid Perovskite (PSC), the new breakthrough technology in the renewable energy field for efficient solar energy harvesting.
She is additionally involved in research initiatives and activities in the field of microelectronics, with a special focus on metallisation schemes with silicides for high-performance electronic devices.
In partnership with STMicroelectronics, she gained Italian and US patents for innovative metallization processes in silicon-based power devices and MOX-based gas sensors.
Toin University in Yokohama and Tokyo University in Japan (Prof. T. Miyasaka), CNRS and Minatec in Grenoble (France), and Synchrotron Radiation facilities (SOLEIL, ESRF) in France are among her international collaborations on the abovementioned topics.
She is the author of over 150 JCR publications, has supervised Masters, PhD, and postdoctoral students, and serves as a reviewer for multiple JCR journals.
See also:
https://www.researchgate.net/profile/Alessandra_Alberti
https://scholar.google.it/citations?user=7GTrh0gAAAAJ&hl=it&cstart=80&pa...
Scientific Productions
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 97-103
Copper micro-flowers for electrocatalytic sensing of nitrate ions in water
Sensors [MDPI], Volume: 24 Issue: 14 Pages: 4501
TiO2—MoS2—PMMA Nanocomposites for an Efficient Water Remediation
Polymers [MDPI], Volume: 16 Issue: 9 Pages: 1200
ZnO–MoS2-PMMA polymeric nanocomposites: A harmless material for water treatment
Materials Today Chemistry [Elsevier], Volume: 36 Pages: 101912
Crystals [MDPI], Volume: 14 Issue: 2 Pages: 125
Electrochemical Growth of Copper Crystals on SPCE for Electrocatalysis Nitrate Reduction
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 21 Pages: 1704
ACS nano [American Chemical Society], Volume: 18 Issue: 2 Pages: 1573-1581
Advanced Optical Materials [], Pages: 2302397
Nanomaterials [MDPI], Volume: 13 Issue: 22 Pages: 2910
Applied Surface Science [North-Holland], Volume: 631 Pages: 157563
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 344 Pages: 15-22
Solar [MDPI], Volume: 3 Issue: 3 Pages: 347-361
Preventing lead leakage in perovskite solar cells with a sustainable titanium dioxide sponge
Nature Sustainability [Nature Publishing Group UK], Pages: 1-10
Lead Detection in a Gig-Lox TiO2 Sponge by X-ray Reflectivity
Nanomaterials [MDPI], Volume: 13 Issue: 8 Pages: 1397
Spongy TiO2 layers deposited by gig-lox sputtering processes: Contact angle measurements
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 41 Issue: 1 Pages: 012802
Stabilizing Wide Bandgap Triple‐Halide Perovskite Alloy through Organic Gelators
Solar RRL [], Volume: 6 Issue: 12 Pages: 2200909
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells
Materials [MDPI], Volume: 15 Issue: 21 Pages: 7790
In-Situ Degradation Pathway Analyses on Hybrid Perovskites with Mixed Cations and Anions
The Journal of Physical Chemistry C [American Chemical Society], Volume: 126 Issue: 39 Pages: 16825-16833
Solar RRL [], Volume: 6 Issue: 8 Pages: 2200267
Black‐Yellow Bandgap Trade‐Off During Thermal Stability Tests in Low‐Temperature Eu‐Doped CsPbI3
Solar RRL [], Volume: 6 Issue: 6 Pages: 2200008
Solar RRL [Wiley], Volume: 6 Issue: 8 Pages: 2200267
Formation of CsPbI3 γ‐Phase at 80 °C by Europium‐Assisted Snowplow Effect
Advanced Energy and Sustainability Research [], Volume: 2 Issue: 7 Pages: 2100091
Exploring the Structural Competition between the Black and the Yellow Phase of CsPbI3
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 5 Pages: 1282
Optical behaviour of γ-black CsPbI3 phases formed by quenching from 80° C and 325° C
Journal of Physics: Materials [IOP Publishing],
The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 9 Pages: 4938-4945
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Applied Surface Science [North-Holland], Volume: 539 Pages: 148218
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 9 Issue: 30 Pages: 16456-16469
Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 16 Pages: 4769
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Applied Surface Science [North-Holland], Volume: 539 Pages: 148218
Frontiers in Chemistry [Frontiers Media SA], Volume: 8 Pages: 200
Temperature Dependent Optical Band Gap in CsPbBr3, MAPbBr3 and FAPbBr3 Single Crystals
The journal of physical chemistry letters [American Chemical Society], Volume: 11 Issue: 7 Pages: 2490-2496
Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Volume: 9 Pages: 100528
Local Order and Rotational Dynamics in Mixed A-Cation Lead Iodide Perovskites
The journal of physical chemistry letters [American Chemical Society], Volume: 11 Issue: 3 Pages: 1068-1074
Frontiers in Chemistry [Frontiers], Volume: 8 Pages: 200
Energies [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 15 Pages: 3953
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
ACS omega [American Chemical Society], Volume: 4 Issue: 20 Pages: 18495-18501
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
Materials (Basel, Switzerland) [], Volume: 12 Issue: 20
ACS omega [American Chemical Society], Volume: 4 Issue: 12 Pages: 15061-15066
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 9 Pages: 1300
Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells
ACS Applied Energy Materials [American Chemical Society], Volume: 2 Issue: 9 Pages: 6218-6229
Nitrogen doped spongy TiO2 layers for sensors application
Materials Science in Semiconductor Processing [Pergamon], Volume: 98 Pages: 44-48
Hybrid perovskites for photovoltaics: Story, challenges and opportunities
La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 42 Issue: 7 Pages: 301-366
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
Pb clustering and PbI 2 nanofragmentation during methylammonium lead iodide perovskite degradation
Nature communications [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-11
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Volume: 216 Issue: 10 Pages: 1800597
Heterogeneous growth of continuous ZIF-8 films on low-temperature amorphous silicon
Applied Surface Science [North-Holland], Volume: 473 Pages: 182-189
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294
Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites
Advanced Energy Materials [], Volume: 9 Issue: 12 Pages: 1803450
Porous Gig-Lox TiO2 Doped with N2 at Room Temperature for P-Type Response to Ethanol
Chemosensors [Multidisciplinary Digital Publishing Institute], Volume: 7 Issue: 1 Pages: 12
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3293
Heterogeneous Growth of Continuous ZIF-8 Films on Low-Temperature Amorphous Silicon
Applied Surface Science [North-Holland],
Stability and Degradation in Hybrid Perovskites: Is the Glass Half-Empty or Half-Full?
The journal of physical chemistry letters [American Chemical Society],
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Innovative spongy TiO2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier], Volume: 259 Pages: 658-667
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Pages: 1800597
Innovative spongy TiO 2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier],
Journal of Materials Chemistry A [The Royal Society of Chemistry],
Carbonization and transition layer effects on 3C-SiC film residual stress
Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19
Revealing a Discontinuity in the Degradation Behavior of CH3NH3PbI3 during Thermal Operation
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 25 Pages: 13577-13585
Revealing a Discontinuity in the Degradation Behaviour of CH3NH3PbI3 during Thermal Operation
The Journal of Physical Chemistry C [American Chemical Society],
First Evidence of CH3NH3PbI3 Optical Constants Improvement in a N2 Environment in the Range 40–80° C
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 14 Pages: 7703-7710
First Evidence of CH3NH3PbI3 Optical Constant Improvement in N2 Environment in the Range 40-80° C
The Journal of Physical Chemistry C [American Chemical Society],
Ion irradiation of AZO thin films for flexible electronics
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 392 Pages: 14-20
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 287-295
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 183-189
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 5 Issue: 48 Pages: 25529-25538
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-15
From PbI2 to MAPbI3 through Layered Intermediates
The Journal of Physical Chemistry C [American Chemical Society], Volume: 120 Issue: 35 Pages: 19768-19777
Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage
Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094103
Energies [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 6 Pages: 433
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-9
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-7
Journal of Display Technology [IEEE], Volume: 12 Issue: 3 Pages: 209-213
Energies [MDPI, Open Access Journal], Volume: 9 Issue: 6
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations
MRS Advances [Materials Research Society], Volume: 1 Issue: 39 Pages: 2701-2709
Stability of solution-processed MAPbI 3 and FAPbI 3 layers
Physical Chemistry Chemical Physics [Royal Society of Chemistry], Volume: 18 Issue: 19 Pages: 13413-13422
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071
Texture of MAPbl (3) Layers Assisted by Chloride on Flat TiO2 Substrates (vol 119, pg 19808, 2015)
JOURNAL OF PHYSICAL CHEMISTRY C [AMER CHEMICAL SOC], Volume: 119 Issue: 37 Pages: 21745-21745
Texture of MAPbI3 layers assisted by chloride on flat TiO2 substrates
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 34 Pages: 19808-19816
Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19
AlN texturing and piezoelectricity on flexible substrates for sensor applications
Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 23
Atomistic origins of CH {sub 3} NH {sub 3} PbI {sub 3} degradation to PbI {sub 2} in vacuum
Applied Physics Letters [], Volume: 106 Issue: 13
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 13 Pages: 131904
Octahedral faceted Si nanoparticles as optical traps with enormous yield amplification
Scientific reports [Nature Publishing Group], Volume: 5 Issue: 1 Pages: 1-7
RSC advances [Royal Society of Chemistry], Volume: 5 Issue: 90 Pages: 73444-73450
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
Applied Physics Letters [American Instite of Physics], Volume: 106 Pages: 013901
Biomedical engineering online [BioMed Central], Volume: 13 Issue: 1 Pages: 1-10
Elusive presence of chloride in mixed halide perovskite solar cells
The journal of physical chemistry letters [American Chemical Society], Volume: 5 Issue: 20 Pages: 3532-3538
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 5 Pages: 054907
Journal of Applied Physics [], Volume: 116 Issue: 5
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 9 Pages: 6425-6433
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 13 Pages: 6576-6585
Thin Solid Films [Elsevier], Volume: 555 Pages: 3-8
Applied surface science [North-Holland], Volume: 296 Pages: 69-78
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction
Materials Letters [North-Holland], Volume: 118 Pages: 130-133
Role of the early stages of Ni‐Si interaction on the formation of transrotational Ni‐silicides
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 164-168
Structural characterization of in‐situ silicided contacts textured on p‐type [001] silicon
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 160-163
Flexible pH sensors based on polysilicon thin film transistors and ZnO nanowalls
Applied Physiscs Letters [American Institute of Physics], Volume: 105 Pages: 093501
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
Giant photoluminescence emission in crystalline faceted Si grains
Scientific reports [Nature Publishing Group], Volume: 3 Issue: 1 Pages: 1-6
Silicided Au/Ni bilayer on p-type [001] silicon for low contact resistance metallization schemes
Microelectronic engineering [Elsevier], Volume: 107 Pages: 196-199
The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 21 Pages: 11176-11185
APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 102 Issue: 3
Applied Physics Letters [AIP Publishing], Volume: 102 Issue: 3 Pages: 039901-039901.1
Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity
AIP Advances [American Institute of Physics], Volume: 3 Issue: 1 Pages: 012105
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 26 Pages: 261906
Role of the Ge surface during the end of range dissolution
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 16 Pages: 162103
Journal of Physics. D, Applied Physics [], Volume: 45
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 45 Issue: 35 Pages: 355301
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 2 Pages: 021103
Journal of Physics D: Applied Physics [Institute of Physics Publishing Inc., The Public Ledger Building, Suite 929 150 South Independence Mall West Philadelphia PA 19106 United States], Volume: 45 Issue: 35
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123510
Schottky barrier inhomogeneities in nickel silicide transrotational contacts
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701
The Journal of Physical Chemistry C [American Chemical Society], Volume: 115 Issue: 15 Pages: 7760-7767
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 12 Pages: 123511
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 14 Pages: 142113
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 9 Pages: 093506
Nucleation and growth of NiSi from Ni 2 Si transrotational domains
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 5 Pages: 053507
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 12 Pages: 123706
Ab Initio Investigations of Textured Ni2Si Films on Silicon
ECS Transactions [IOP Publishing], Volume: 3 Issue: 2 Pages: 149
Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si
Acta Crystallographica Section B: Structural Science [International Union of Crystallography], Volume: 62 Issue: 5 Pages: 729-736
Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379
Critical nickel thickness to form silicide transrotational structures on [001] silicon
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 10 Pages: 102105
Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103
Texture in Nickel-Silicide Films on Silicon
ECS Meeting Abstracts [IOP Publishing], Issue: 20 Pages: 1012
Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
Acta Crystallographica Section B: Structural Science [International Union of Crystallography], Volume: 61 Issue: 5 Pages: 486-491
Effect of a Ti cap layer on the diffusion of Co atoms during CoSi2 reaction
Electrochemical and solid-state letters [The Electrochemical Society], Volume: 8 Issue: 2 Pages: G47-G50
Fully solvent-free preparation of MAPbI3 films for photovoltaic application
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19) [],
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 417-421
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 346-349
Structural and Optical Behaviour of MAPbI3Layers in Nitrogen and Humid Air
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) [IEEE], Pages: 1-5
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 124-127
Voids-free 3C-SiC/Si interface for high quality epitaxial layer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 159-162
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173
3C-SiC Polycrystalline Films on Si for Photovoltaic Applications
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 189-192
Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 773-776
SENSORS, 2014 IEEE [IEEE], Pages: 1730-1733
Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 95-98
3C-SiC growth on (001) Si substrates by using a multilayer buffer
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 263-266
Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001] Si
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 151-153
Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 1027-1030
Measuring Techniques for the Semiconductor’s Parameters
Springer Handbook of Semiconductor Devices [Springer, Cham], Pages: 117-168
Sensors [Springer, Cham], Pages: 9-12