Patrick.Fiorenza | Catania HQ

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Surname:

Fiorenza

Firstname:

Patrick

Position:

Staff

Profile:

Senior Researcher

Phone:

+390955968247

Curriculum:

Patrick Fiorenza received the M.Sc. in Physics and the PhD in Material Science from the University of Catania in 2003 and 2007, respectively. In 2005, he was visiting scientist at IMEC (Belgium). Since 2011 he is Researcher at CNR-IMM. His research activity is mainly focused on carrier transport, trapping phenomena and reliability at Metal-Insulato-Semiconductor and Metal-Semiconductor interfaces in SiC and GaN. He has a recognized experience in characterization of advanced materials and devices by scanning probe microscopy. He is co-author of more than 150 papers and three book chapters. He was member of the local organizing committee of Hetero-SiC-WASMPE 2009, WOCSDICE2011 and ICSCRM 2015, and was involved in several European and national projects (NUOTO, NetFISiC , Last Power, Ambition Power). He was principal investigator for the CNR-IMM unit of the project GRIFONE (2015-2018) within the FlagERA call.

Scientific Productions

Patrick Fiorenza, Marco Zignale, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps

Materials Science in Semiconductor Processing [Pergamon], Volume: 169 Pages: 107866

F Esposito, M Bosi, G Attolini, F Rossi, SE Panasci, P Fiorenza, F Giannazzo, F Fabbri, L Seravalli

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Applied Surface Science [North-Holland], Volume: 639 Pages: 158230

Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837

Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Béla Pécz, Zsolt Fogarassy, Emanuela Schilirò, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic Engineering [Elsevier], Pages: 112103

Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals [MDPI], Volume: 13 Issue: 9 Pages: 1309

Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638

M Vivona, P Fiorenza, V Scuderi, F La Via, F Giannazzo, F Roccaforte

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7

Patrick Fiorenza, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1090 Pages: 113-117

Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Marcin Zielinski, Hugues Mank, Valdas Jokubavicius, Rositsa Yakimova

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied Surface Science [North-Holland], Volume: 606 Pages: 154896

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506

I Deretzis, P Fiorenza, T Fazio, E Schilirò, R Lo Nigro, G Greco, G Fisicaro, F Roccaforte, A La Magna

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced Materials Interfaces [], Pages: 2201502

Raffaella Lo Nigro, Patrick Fiorenza, Béla Pécz, Jens Eriksson

Nanotechnology for Electronic Materials and Devices

Nanomaterials [MDPI], Volume: 12 Issue: 19 Pages: 3319

Antonio Valletta, Fabrizio Roccaforte, Antonino La Magna, Guglielmo Fortunato, Patrick Fiorenza

Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Semiconductor Science and Technology [IOP Publishing],

Patrick Fiorenza, Emanuela Schilirò, Giuseppe Greco, Marilena Vivona, Marco Cannas, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

Applied Surface Science [North-Holland], Volume: 579 Pages: 152136

Raffaella Lo Nigro, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Fabrizio Roccaforte

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and GalliumNitride Electronic Devices

Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830

Salvatore E Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

ACS Applied Electronic Materials [American Chemical Society],

Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316

Marilena Vivona, Giuseppe ,Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Applied Surface Science [North-Holland], Volume: 557 Pages: 149752

G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501

Patrick Fiorenza, Mario S Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626

L Seravalli, M Bosi, P Fiorenza, SE Panasci, D Orsi, E Rotunno, L Cristofolini, F Rossi, F Giannazzo, F Fabbri

Gold nanoparticle assisted synthesis of MoS 2 monolayers by chemical vapor deposition

Nanoscale Advances [Royal Society of Chemistry], Volume: 3 Issue: 16 Pages: 4826-4833

Emanuela Schilirò, Patrick Fiorenza, Corrado Bongiorno, Corrado Spinella, Salvatore Di Franco, Giuseppe Greco, Raffaella Lo Nigro, Fabrizio Roccaforte

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Correlation between the interfacial charge trapping and chemical properties of deposited SiO2 layers in 4H-SiC MOSFETs subjected to different nitridations

arXiv e-prints [], Pages: arXiv: 2012.08829

Francesco La Via, Massimo Zimbone, Viviana Scuderi, Cristiano Calabretta, Corrado Bongiorno, Filippo Giannazzo, Patrick Fiorenza, Annamaria Muoio

Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior

ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte

Technologies for Normally-off GaN HEMTs

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175

Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502

P Fiorenza, E Schilirò, F Giannazzo, C Bongiorno, M Zielinski, F La Via, F Roccaforte

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied Surface Science [North-Holland], Pages: 146656

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 38 Issue: 3 Pages: 032410

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide (SiC) based devices

arXiv preprint arXiv:2004.10988 [],

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

P Fiorenza, MS Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems

Advanced Materials Letters [International Association of Advanced Materials], Volume: 11 Issue: 1 Pages: 1-5

Patrick Fiorenza, Mario Santo Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing],

Ivan Shtepliuk, Ivan G Ivanov, Tihomir Iakimov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Patrick Fiorenza, Filippo Giannazzo

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 96 Pages: 145-152

F Giannazzo, Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Tihomir Iakimov, A Kakanakova-Georgieva, E Schilirò, P Fiorenza, Rositsa Yakimova

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy.

Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003

Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Emanuele Smecca, Salvatore Sanzaro, Alessandra Alberti, Mario Saggio, Fabrizio Roccaforte

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

S Petralia, T Cosentino, F Sinatra, M Favetta, P Fiorenza, C Bongiorno, EL Sciuto, S Conoci, S Libertino

Silicon Nitride Surfaces as Active Substrate for Electrical DNA Biosensors

Sensors and Actuators B: Chemical [Elsevier], Volume: 252 Pages: 492-502

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, F La Via

Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ildikó Cora, Béla Pécz

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, S Di Franco, F La Via

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (001) for high-power MOSFET applications

Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903

G Fisichella, P Fiorenza, R Yakimova, F Roccaforte

F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"

HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 14 Pages: 142108

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508

Raffaella Lo Nigro, Patrick Fiorenza, Maria R Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino

Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439

Rainer Schmidt, Shubhra Pandey, Patrick Fiorenza, Derek C Sinclair

Non-stoichiometry in “CaCu₃Ti₄O₁₂”(CCTO) ceramics

RSC advances [The Royal Society of Chemistry],

Rainer Schmidt, Shubhra Pandey, Patrick Fiorenza, Derek C Sinclair

Non-stoichiometry in “CaCu 3 Ti 4 O 12”(CCTO) ceramics

RSC Advances [Royal Society of Chemistry], Volume: 3 Issue: 34 Pages: 14580-14589

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Maria R Catalano, Graziella Malandrino, Corrado Bongiorno, Roberta G Toro, Patrick Fiorenza, Romain Bodeux, Jerome Wolfman, Monique Gervais, Cécile Autret Lambert, François Gervais, Raffaella Lo Nigro

CaCu3Ti4O12 thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes

Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2-3 Pages: 1108-1115

Maria R Catalano, Graziella Malandrino, Corrado Bongiorno, Roberta G Toro, Patrick Fiorenza, Romain Bodeux

CaCu {sub 3} Ti {sub 4} O {sub 12} thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes

Materials Chemistry and Physics [], Volume: 133

CaCu 3 Ti 4 O 12 thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes

Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2 Pages: 1108-1115

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 25 Pages: 072117

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri

Scanning probe microscopy on heterogeneous CaCu 3 Ti 4 O 12 thin films

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-4

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117

Patrick Fiorenza, Vito Raineri, Stefan G Ebbinghaus, Raffaella Lo Nigro

CaCu 3 Ti 4 O 12 single crystals: insights on growth and nanoscopic investigation

CrystEngComm [Royal Society of Chemistry], Volume: 13 Issue: 11 Pages: 3900-3904

Patrick Fiorenza, Vito Raineri, Matthew C Ferrarelli, Derek C Sinclair, Raffaella Lo Nigro

Nanoscale electrical probing of heterogeneous ceramics: the case of giant permittivity calcium copper titanate (CaCu 3 Ti 4 O 12)

Nanoscale [Royal Society of Chemistry], Volume: 3 Issue: 3 Pages: 1171-1175

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Graziella Malandrino, Roberta G Toro, Maria R Catalano

High capacitance density by CaCu 3 Ti 4 O 12 thin films

Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 7 Pages: 074103

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Stephan Krohns, Peter Lunkenheimer, Alois Loidl, Stefan G Ebbinghaus, Matthew C Ferrarelli, Derek C Sinclair, Anthony R West

Detection of heterogeneities in single-crystal CaCu3Ti4O12 using Conductive Atomic Force Microscopy

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012018

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Rainer Schmidt, Derek C Sinclair

Probing dielectric ceramics surface at sub-micrometer scale

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012038

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Andrew G Mould, Derek C Sinclair

Probing heterogeneity in ptcr-BaTiO3 thermistors by local probe electrical measurements

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012037

Raffaella Lo Nigro, Patrick Fiorenza, Vito Raineri

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu 3 Ti 4 O 12 Perovskite Oxide

MRS Online Proceedings Library [Springer International Publishing], Volume: 1232 Issue: 1 Pages: 70101-70106

Raffaella Lo Nigro, Patrick Fiorenza, Vito Raineri

Conductive atomic force microscopy and Scanning impedance microscopy for the imaging of electrical domain in CaCu3Ti4O12 perovskite oxide

MRS Online Proceedings Library [Springer International Publishing], Volume: 1232 Pages: 70101-70106

Raffaella Lo Nigro, Patrick Fiorenza, Vito Raineri

Conductive atomic force microscopy and Scanning impedance microscopy for the imaging of electrical domain in CaCu3Ti4O12 perovskite oxide

MRS Online Proceedings Library [Springer International Publishing], Volume: 1232 Issue: 1 Pages: 1

Patrick Fiorenza, Raffaella Lo Nigro, Pietro Delugas, Vito Raineri, Andrew G Mould, Derek C Sinclair

Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO 3 ceramics

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 14 Pages: 142904

Raffaella Lo Nigro, Roberta G Toro, Maria Rita Catalano, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

CaCu3Ti4O12 Thin Films for Capacitive Applications: MOCVD Synthesis and Nanoscopic/Microscopic Characterization

ECS Transactions [IOP Publishing], Volume: 25 Issue: 8 Pages: 135

A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, C Bongiorno, A La Magna, F La Via

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 11 Pages: 111905

P Fiorenza, R Lo Nigro, A Sciuto, P Delugas, V Raineri, RG Toro, MR Catalano, G Malandrino

Perovskite CaCu 3 Ti 4 O 12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 6 Pages: 061634

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

3C-SiC Heteroepitaxy on (100),(111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 243

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

Patrick Fiorenza, Raffaella Lo Nigro, Corrado Bongiorno, Vito Raineri, Matthew C Ferarrelli, Derek C Sinclair, Anthony R West

Localized electrical characterization of the giant permittivity effect in Ca Cu 3 Ti 4 O 12 ceramics

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 18 Pages: 182907

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135

Raffaella Lo Nigro, Graziella Malandrino, Patrick Fiorenza, Ignazio L Fragalà

Template-free and seedless growth of Pt nanocolumns: imaging and probing their nanoelectrical properties

ACS nano [American Chemical Society], Volume: 1 Issue: 3 Pages: 183-190