P Fiorenza, F Cordiano, SM Alessandrino, A Russo, E Zanetti, M Saggio, C Bongiorno, F Giannazzo, F Roccaforte

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200 {\deg} C

arXiv preprint arXiv:2410.19545 [],

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

AIP Advances [AIP Publishing], Volume: 14 Issue: 10

Salvatore Ethan Panasci, Emanuela Schiliro, Marco Cannas, Simonpietro Agnello, Antal Koos, Miklos Nemeth, Béla Pécz, Fabrizio Roccaforte, Filippo Giannazzo

Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 7-12

Marilena Vivona, Patrick Fiorenza, Giuseppe Greco, Salvatore Di Franco, Gabriele Bellocchi, Paola Mancuso, Simone Rascunà, Antonio Mio, Giuseppe Nicotra, Filippo Giannazzo, Fabrizio Roccaforte

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395

Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Béla Pécz, Filippo Giannazzo

Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 97-99

Patrick Fiorenza, Enzo Fontana, Giovanni Maira, Cettina Bottari, Salvatore Adamo, Beatrice Carbone, Mario S Alessandrino, Alfio Russo, Salvatore Ethan Panasci, Marco Zignale, Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Understanding of the Impact of Carrot-Like Defects Embedded in the 4H-SiC Power MOSFET Structure: A Route for an Effective Device Qualification

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 678-679

Marilena Vivona, Patrick Fiorenza, Viviana Scuderi, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 361 Pages: 27-32

Patrick Fiorenza, Marco Zignale, Edoardo Zanetti, Mario S Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 358 Pages: 45-49

G Greco, P Fiorenza, F Giannazzo, M Vivona, C Venuto, F Iucolano, F Roccaforte

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

IEEE Electron Device Letters [IEEE],

Salvatore Ethan Panasci, Emanuela Schilirò, Antal Koos, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Béla Pécz, Filippo Giannazzo

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 24

Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Bela Pecz, Filippo Giannazzo

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 10

Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133

Patrick Fiorenza, Marco Zignale, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps

Materials Science in Semiconductor Processing [Pergamon], Volume: 169 Pages: 107866

F Esposito, M Bosi, G Attolini, F Rossi, SE Panasci, P Fiorenza, F Giannazzo, F Fabbri, L Seravalli

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Applied Surface Science [North-Holland], Volume: 639 Pages: 158230

Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837

Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Béla Pécz, Zsolt Fogarassy, Emanuela Schilirò, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic Engineering [Elsevier], Pages: 112103

E Schilirò, SE Panasci, AM Mio, G Nicotra, S Agnello, B Pecz, Gy Z Radnoczi, I Deretzis, A La Magna, F Roccaforte, R Lo Nigro, F Giannazzo

Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

Applied Surface Science [North-Holland], Volume: 630 Pages: 157476

Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638

M Vivona, P Fiorenza, V Scuderi, F La Via, F Giannazzo, F Roccaforte

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7

Patrick Fiorenza, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1090 Pages: 113-117

Ivan Shtepliuk, Jing-Xin Jian, Nikolaos Pliatsikas, Emanuela Schilirò, Tihomir Iakimov, Gholamreza Yazdi, Ivan G Ivanov, Filippo Giannazzo, Kostas Sarakinos, Rositsa Yakimova

Electrochemical performance of gold-decorated graphene electrodes integrated with SiC

Microelectronic Engineering [Elsevier], Pages: 112042

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Exploring UV-Laser Effects on Al-Implanted 4H-SiC

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89

Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009

SE Panasci, E Schilirò, A Koos, M Nemeth, M Cannas, S Agnello, F Roccaforte, B Pécz, F Giannazzo

Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

Microelectronic Engineering [Elsevier], Pages: 111967

Béla Pécz, Miklos Nemeth, Filippo Giannazzo, Anelia Kakanakova-Georgieva

On the Possibility of Realizing a 2D Structure of Si N Bonds by Metal‐Organic Chemical Vapor Deposition

physica status solidi (b) [], Pages: 2300262

Gianfranco Sfuncia, Giuseppe Nicotra, Filippo Giannazzo, Béla Pécz, Gueorgui Kostov Gueorguiev, Anelia Kakanakova-Georgieva

2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

CrystEngComm [Royal Society of Chemistry],

Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Béla Pécz, Simonpietro Agnello, Marco Cannas, Filippo Giannazzo

Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations

physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Marcin Zielinski, Hugues Mank, Valdas Jokubavicius, Rositsa Yakimova

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied Surface Science [North-Holland], Volume: 606 Pages: 154896

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506

Salvatore Ethan Panasci, Antonino Alessi, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Emanuela Schilirò, Filippo Giannazzo, Simonpietro Agnello

Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation

physica status solidi (a) [], Volume: 219 Issue: 21 Pages: 2200096

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced Materials Interfaces [], Pages: 2201502

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Ethan Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520

Salvatore Valastro, Emanuele Smecca, Corrado Bongiorno, Carlo Spampinato, Giovanni Mannino, Simone Biagi, Ioannis Deretzis, Filippo Giannazzo, Ajay Kumar Jena, Tsutomu Miyasaka, Antonino La Magna, Alessandra Alberti

Out‐of‐Glovebox Integration of Recyclable Europium‐Doped CsPbI3 in Triple‐Mesoscopic Carbon‐Based Solar Cells Exceeding 9% Efficiency

Solar RRL [], Volume: 6 Issue: 8 Pages: 2200267

Filippo Giannazzo, Salvatore E Panasci, Emanuela Schilirò, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287

Ivan Shtepliuk, Mikhail Vagin, Ziyauddin Khan, Alexei A Zakharov, Tihomir Iakimov, Filippo Giannazzo, Ivan G Ivanov, Rositsa Yakimova

Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiC

Nanomaterials [MDPI], Volume: 12 Issue: 13 Pages: 2229

Gianfranco Sfuncia, Giuseppe Nicotra, Filippo Giannazzo, Béla Pécz, Gueorgui Kostov Gueorguiev, Anelia Kakanakova-Georgieva

2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface

arXiv preprint arXiv:2206.10247 [],

Patrick Fiorenza, Emanuela Schilirò, Giuseppe Greco, Marilena Vivona, Marco Cannas, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

Applied Surface Science [North-Holland], Volume: 579 Pages: 152136

Salvatore E Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182

Salvatore Valastro, Emanuele Smecca, Corrado Bongiorno, Carlo Spampinato, Giovanni Mannino, Simone Biagi, Ioannis Deretzis, Filippo Giannazzo, Ajay Kumar Jena, Tsutomu Miyasaka, Antonino La Magna, Alessandra Alberti

Out-of-Glovebox Integration of Recyclable Europium-Doped CsPbI3 in Triple-Mesoscopic Carbon-Based Solar Cells Exceeding 9% Efficiency

Solar RRL [Wiley], Volume: 6 Issue: 8 Pages: 2200267

F Giannazzo, G Greco, Y Cordier, F Roccaforte

Towards ballistic vertical transistors by graphene integration with nitride semiconductors

Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

ACS Applied Electronic Materials [American Chemical Society],

Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316

SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, F Giannazzo, S Agnello

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E Panasci, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Fabrizio Roccaforte, Filippo Giannazzo

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

arXiv preprint arXiv:2108.09542 [],

Marilena Vivona, Giuseppe ,Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Applied Surface Science [North-Holland], Volume: 557 Pages: 149752

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259

G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501

Patrick Fiorenza, Mario S Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626

Giovanni Mannino, Ioannis Deretzis, Emanuele Smecca, Filippo Giannazzo, Salvatore Valastro, Giuseppe Fisicaro, Antonino La Magna, Davide Ceratti, Alessandra Alberti

CsPbBr3, MAPbBr3, and FAPbBr3 Bromide Perovskite Single Crystals: Interband Critical Points under Dry N2 and Optical Degradation under Humid Air

The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 9 Pages: 4938-4945

Anelia Kakanakova-Georgieva, Filippo Giannazzo, Giuseppe Nicotra, Ildikó Cora, Gueorgui K Gueorguiev, Per ÅO Persson, Béla Pécz

Material Proposal for 2D Indium Oxide

Applied Surface Science [North-Holland], Pages: 149275

L Seravalli, M Bosi, P Fiorenza, SE Panasci, D Orsi, E Rotunno, L Cristofolini, F Rossi, F Giannazzo, F Fabbri

Gold nanoparticle assisted synthesis of MoS 2 monolayers by chemical vapor deposition

Nanoscale Advances [Royal Society of Chemistry], Volume: 3 Issue: 16 Pages: 4826-4833

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Correlation between the interfacial charge trapping and chemical properties of deposited SiO2 layers in 4H-SiC MOSFETs subjected to different nitridations

arXiv e-prints [], Pages: arXiv: 2012.08829

Béla Pécz, Giuseppe Nicotra, Filippo Giannazzo, Rositsa Yakimova, Antal Koos, Anelia Kakanakova‐Georgieva

Indium Nitride at the 2D Limit

Advanced Materials [], Pages: 2006660

Francesco La Via, Massimo Zimbone, Viviana Scuderi, Cristiano Calabretta, Corrado Bongiorno, Filippo Giannazzo, Patrick Fiorenza, Annamaria Muoio

Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior

ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762

E Schilirò, R Lo Nigro, SE Panasci, FM Gelardi, S Agnello, Rositsa Yakimova, F Roccaforte, F Giannazzo

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon [Pergamon], Volume: 169 Pages: 172-181

F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, F Roccaforte, S Agnello, J Brault, Y Cordier, A Michon

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705

Filippo Giannazzo, Emanuela Schilirò, Raffaella Lo Nigro, Pawel Prystawko, Yvon Cordier

Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 397-438

Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502

Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Ewa Grzanka, Mike Leszczynski, Filippo Giannazzo, Fabrizio Roccaforte

Thermal annealing effect on electrical and structural properties of Tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502

Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zielinski, Massimo Zimbone, Antonino La Magna

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402

P Fiorenza, E Schilirò, F Giannazzo, C Bongiorno, M Zielinski, F La Via, F Roccaforte

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied Surface Science [North-Holland], Pages: 146656

Angelo Armano, Gianpiero Buscarino, Fabrizio Messina, Alice Sciortino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schilirò, Simonpietro Agnello

Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 3 Pages: 528

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi level Engineering for Graphene Through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

P Fiorenza, MS Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203

Anelia Kakanakova, Gueorgui K Gueorguiev, Davide G Sangiovanni, Nattamon Suwannaharn, Ivan G Ivanov, Ildikó Cora, Béla Pécz, Giuseppe Nicotra, Filippo Giannazzo

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Nanoscale [Royal Society of Chemistry],

I Shtepliuk, IG Ivanov, M Vagin, Z Khan, T Iakimov, N Pliatsikas, K Sarakinos, F Giannazzo, R Yakimova

Manipulation of epitaxial graphene towards novel properties and applications

Materials Today: Proceedings [Elsevier], Volume: 20 Pages: 37-45

Anelia Kakanakova-Georgieva, Ivan G Ivanov, Nattamon Suwannaharn, Chih-Wei Hsu, Ildikó Cora, Béla Pécz, Filippo Giannazzo, Davide G Sangiovanni, Gueorgui K Gueorguiev

MOCVD of AlN on epitaxial graphene at extreme temperatures

CrystEngComm [Royal Society of Chemistry],

Anelia Kakanakova-Georgieva, Gueorgui K Gueorguiev, Davide G Sangiovanni, Nattamon Suwannaharn, Ivan G Ivanov, Ildikó Cora, Béla Pécz, Giuseppe Nicotra, Filippo Giannazzo

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 37 Pages: 19470-19476

Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Mikhail Vagin, Ziyauddin Khan, Tihomir Iakimov, Nikolaos Pliatsikas, Kostas Sarakinos, F Giannazzo, Rositsa Yakimova

Manipulation of epitaxial graphene towards novel properties and applications

Materials Today: Proceedings [Elsevier], Volume: 20 Pages: 37-45

Salvatore Valastro, Emanuele Smecca, Salvatore Sanzaro, Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Youhei Numata, Ajay Kumar Jena, Tsutomu Miyasaka, Antonio Gagliano, Alessandra Alberti

Improved Electrical and Structural Stability in HTL-Free Perovskite Solar Cells by Vacuum Curing Treatment

Energies [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 15 Pages: 3953

Patrick Fiorenza, Mario Santo Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing],

Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Sebastiano Ravesi, Eric Frayssinet, Adrien Michon, Yvon Cordier

High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354

Alessandra Alberti, Emanuele Smecca, Salvatore Sanzaro, Corrado Bongiorno, Filippo Giannazzo, Giovanni Mannino, Antonino La Magna, Maning Liu, Paola Vivo, Andrea Listorti, Emanuele Calabro, Fabio Matteocci, Aldo Di Carlo

Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells

ACS Applied Energy Materials [American Chemical Society], Volume: 2 Issue: 9 Pages: 6218-6229

Angelo Armano, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schilirò, Raffaella Lo Nigro, Simonpietro Agnello

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Carbon [Pergamon], Volume: 149 Pages: 546-555

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

Ivan Shtepliuk, Ivan G Ivanov, Tihomir Iakimov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Patrick Fiorenza, Filippo Giannazzo

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 96 Pages: 145-152

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G Ivanov, Rositsa Yakimova, Filippo Giannazzo

Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

F Giannazzo, Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Tihomir Iakimov, A Kakanakova-Georgieva, E Schilirò, P Fiorenza, Rositsa Yakimova

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy.

Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Monia Spera, Giuseppe Greco, R Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Alessandra Alberti, Ioannis Deretzis, Giovanni Mannino, Emanuele Smecca, Filippo Giannazzo, Andrea Listorti, Silvia Colella, Sofia Masi, Antonino La Magna

Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites

Advanced Energy Materials [], Volume: 9 Issue: 12 Pages: 1803450

Giuliana Faggio, Andrea Gnisci, Giacomo Messina, Nicola Lisi, Andrea Capasso, Gwan Hyoung Lee, Angelo Armano, Alice Sciortino, Fabrizio Messina, Marco Cannas, Franco Mario Gelardi, Emanuela Schilirò, Filippo Giannazzo, Simonpietro Agnello

Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study

physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800559

Angelo Armano, Gianpiero Buscarino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schiliró, Raffaella Lo Nigro, Simonpietro Agnello

Graphene‐SiO2 Interaction from Composites to Doping

physica status solidi (a) [], Volume: 216 Issue: 3 Pages: 1800540

Filippo Giannazzo

Engineering 2D heterojunctions with dielectrics

Nature Electronics [Nature Publishing Group], Volume: 2 Issue: 2 Pages: 54-55

A Armano, G Buscarino, F Messina, A Sciortino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

Thin Solid Films [Elsevier], Volume: 669 Pages: 620-624

Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in CVD‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

A Armano, G Buscarino, F Messina, A Sciortino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

Thin Solid Films [Elsevier],

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Interfacing Graphene with III-Nitrides for Power Device Applications

AiMES 2018 Meeting (September 30-October 4, 2018) [ECS],

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Interfacing Graphene with III-Nitrides for Power Device Applications

ECS Meeting Abstracts [IOP Publishing], Issue: 38 Pages: 1281

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

Carbon [Pergamon], Volume: 127 Pages: 270-279

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta K Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 6 Issue: 10 Pages: P741

A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, S Agnello

Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

Carbon [Pergamon],

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1325

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Sijia Gu, Xin Zhou, Tianjun Lin, Henri Happy, Tuami Lasri

Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy

Nanotechnology [IOP Publishing], Volume: 28 Issue: 33 Pages: 335702

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon [Pergamon], Volume: 116 Pages: 722-732

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pecz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Rachela G Milazzo, Antonio M Mio, Giuseppe D’Arrigo, Emanuele Smecca, Alessandra Alberti, Gabriele Fisichella, Filippo Giannazzo, Corrado Spinella, Emanuele Rimini

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 183-189

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ildikó Cora, Béla Pécz

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Substrate and atmosphere influence on oxygen p-doped graphene

Carbon [Pergamon], Volume: 107 Pages: 696-704

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

Effect of air on oxygen p‐doped graphene on SiO2

physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, F Roccaforte

Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178

Filippo Giannazzo

Insight into the mechanisms of chemical doping of graphene on silicon carbide

Nanotechnology [IOP Publishing], Volume: 27 Issue: 7 Pages: 072502

Alessandra Alberti, Ioannis Deretzis, Giovanna Pellegrino, Corrado Bongiorno, Emanuele Smecca, Giovanni Mannino, Filippo Giannazzo, Guglielmo Guido Condorelli, Nobuya Sakai, Tsutomu Miyasaka, Corrado Spinella, Antonino La Magna

Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum

ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071

A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, F Roccaforte, M Cannas, FM Gelardi, S Agnello

Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere

The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723

F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte

Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers

Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307

Rosaria A Puglisi, Sebastiano Caccamo, Luisa D'Urso, Gabriele Fisichella, Filippo Giannazzo, Markus Italia, Antonino La Magna

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

physica status solidi (a) [], Volume: 212 Issue: 8 Pages: 1685-1694

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

G Nicotra, I Deretzis, M Scuderi, C Spinella, P Longo, Rositsa Yakimova, F Giannazzo, A La Magna

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

Physical Review B [American Physical Society], Volume: 91 Issue: 15 Pages: 155411

I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, N Sakai, T Miyasaka, A La Magna

Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 13 Pages: 131904

I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, A La Magna, N Sakai, T Miyasaka

Atomistic origins of CH {sub 3} NH {sub 3} PbI {sub 3} degradation to PbI {sub 2} in vacuum

Applied Physics Letters [], Volume: 106 Issue: 13

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied surface science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117

Giuseppe Nicotra, Paolo Longo, Ioannis Deretzis, Mario Scuderi, Antonino La Magna, Filippo Giannazzo, Ray D Twesten, Corrado Spinella

Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy

Microscopy and Microanalysis [Cambridge University Press], Volume: 20 Issue: S3 Pages: 560-561

K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, F Giannazzo, F Roccaforte, Gabriel Ferro

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285

G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 23 Pages: 233105

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, F Roccaforte, A La Magna

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, A La Magna

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied surface science [North-Holland], Volume: 291 Pages: 53-57

Werner Schustereder, Johannes G Laven, Hans-Joachim Schulze, Peter Hadley, Sebastiano Ravesi, Filippo Giannazzo

Papers presented at the E-MRS 2014 Spring Meeting–Symposium X Materials Research for Group IV Semiconductors: Growth, Characterization, and Technological Developments

Phys. Status Solidi C [], Volume: 11 Issue: 11-12 Pages: 1539-1543

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Sebastiano Cataldo, Camillo Sartorio, Filippo Giannazzo, Antonino Scandurra, Bruno Pignataro

Self-organization and nanostructural control in thin film heterojunctions

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 7 Pages: 3566-3575

Giuseppe Nicotra, Quentin M Ramasse, Mario Scuderi, Paolo Longo, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Corrado Spinella

Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1714

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717

M Ostler, I Deretzis, S Mammadov, F Giannazzo, G Nicotra, C Spinella, Th Seyller, A La Magna

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

Physical Review B [American Physical Society], Volume: 88 Issue: 8 Pages: 085408

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

G Nicotra, QM Ramasse, I Deretzis, C Bongiorno, C Spinella, F Giannazzo

Atomic-Scale Analysis of Chemical Bonding of Delaminated Graphene at Faceted SiC by Aberration-Corrected Scanning Transmission Electron Microscopy

Microscopy and Microanalysis [Cambridge University Press], Volume: 19 Issue: S2 Pages: 1238-1239

Giovanna Pellegrino, Alessandra Alberti, Guglielmo G Condorelli, Filippo Giannazzo, Antonino La Magna, Anna Maria Paoletti, Giovanna Pennesi, Gentilina Rossi, Gloria Zanotti

Study of the Anchoring Process of Tethered Unsymmetrical Zn-Phthalocyanines on TiO2 Nanostructured Thin Films

The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 21 Pages: 11176-11185

C Garozzo, F Giannazzo, M Italia, A La Magna, V Privitera, RA Puglisi

Radial junctions formed by conformal chemical doping for innovative hole-based solar cells

Materials Science and Engineering: B [Elsevier], Volume: 178 Issue: 9 Pages: 686-690

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006

Giuseppe Nicotra, Quentin M Ramasse, Ioannis Deretzis, Antonino La Magna, Corrado Spinella, Filippo Giannazzo

Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy

ACS nano [American Chemical Society], Volume: 7 Issue: 4 Pages: 3045-3052

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439

Alessandra Alberti, Filippo Giannazzo

Publisher's Note:“Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy”[Appl. Phys. Lett. 101, 261906 (2012)]

Applied Physics Letters [AIP Publishing], Volume: 102 Issue: 3 Pages: 039901-039901.1

Alessandra Alberti, Filippo Giannazzo

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy (vol 101, 261906, 2012)

APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 102 Issue: 3

M Valvo, C Bongiorno, F Giannazzo, A Terrasi

Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001) Si single crystal

Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 3 Pages: 033513

Alessandra Alberti, Filippo Giannazzo

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 26 Pages: 261906

F Giannazzo, I Deretzis, A La Magna, F Roccaforte, Rositsa Yakimova

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

F Giannazzo, V Raineri

Graphene: Synthesis and nanoscale characterization of electronic properties

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 35 Pages: 267-304

S Sonde, C Vecchio, F Giannazzo, Rositsa Yakimova, V Raineri, E Rimini

Effect of graphene/4H-SiC (0001) interface on electrostatic properties in graphene

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 993-996

S Sonde, C Vecchio, F Giannazzo, R Lo Nigro, V Raineri, E Rimini

Influence of substrate dielectric permittivity on local capacitive behavior in graphene

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 989-992

Chiara Musumeci, Mali H Rosnes, Filippo Giannazzo, Mark D Symes, Leroy Cronin, Bruno Pignataro

Smart high-κ nanodielectrics using solid supported polyoxometalate-rich nanostructures

ACS nano [American Chemical Society], Volume: 5 Issue: 12 Pages: 9992-9999

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Applied Physics Letters [], Volume: 99 Issue: 25 Pages: 259901

Carmelo Vecchio, Sushant Sonde, Corrado Bongiorno, Martin Rambach, Rositza Yakimova, Vito Raineri, Filippo Giannazzo

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Nanoscale Research Letters [Springer New York], Volume: 6 Issue: 1 Pages: 269

Filippo Giannazzo, Sushant Sonde, Emanuele Rimini, Vito Raineri

Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-8

László Dózsa, Štefan Lányi, Vito Raineri, Filippo Giannazzo, Nikolay Gennadevich Galkin

Microscopic study of electrical properties of CrSi 2 nanocrystals in silicon

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 209

László Dózsa, György Molnár, Vito Raineri, Filippo Giannazzo, János Ferencz, Štefan Lányi

Scanning tip measurement for identification of point defects

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 140

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri, Fabrizio Roccaforte

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Filippo Giannazzo, Sushant Sonde, Raffaella Lo Nigro, Emanuele Rimini, Vito Raineri

Mapping the density of scattering centers limiting the electron mean free path in graphene

Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4612-4618

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302

Giuseppe Compagnini, Giuseppe Forte, Filippo Giannazzo, Vito Raineri, Antonino La Magna, Iannis Deretzis

Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations

Journal of Molecular Structure [Elsevier], Volume: 993 Issue: 1-3 Pages: 506-509

S Sonde, F Giannazzo, C Vecchio, R Yakimova, E Rimini, V Raineri

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)

APPLIED PHYSICS LETTERS [AMER INST PHYSICS], Volume: 98 Issue: 6

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Erratum: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas [Appl. Phys. Lett. 97, 132101 (2010)]

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 6 Pages: 132101

Vito Raineri, Emanuele Rimini, Filippo Giannazzo

Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si

Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 3 Issue: 1 Pages: 55-58

Filippo Giannazzo, Pierre Eyben, Jacek Baranowski, Jean Camassel, Stefan Lányi

Advanced materials nanocharacterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 107

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Correction: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas (vol 97, 132101, 2010)

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 6 Pages: 069902

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707

A FRAZZETTO, F GIANNAZZO, R LO NIGRO, V RAINERI, F ROCCAFORTE

Structural and transport properties in alloyed Ti

Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50

S Sonde, F Giannazzo, C Vecchio, Rositsa Yakimova, E Rimini, V Raineri

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 13 Pages: 132101

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri

Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate

physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 907-911

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

Investigation of graphene–SiC interface by nanoscale electrical characterization

physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 4 Pages: 912-915

F Giannazzo, S Sonde, V Raineri, G Patanè, G Compagnini, F Aliotta, R Ponterio, E Rimini

Optical, morphological and spectro- scopic characterization of graphene on SiO 2

physica status solidi c [WILEY‐VCH Verlag], Volume: 7 Issue: 3‐4 Pages: 1251-1255

V Raineri, F Giannazzo

Scanning tip measurement for identification of point defects

NANOSCALE RESEARCH LETTERS [Springer Science and Media], Volume: 6 Issue: 1 Pages: 1-5

F Giannazzo, S Sonde, V Raineri, E Rimini

Irradiation damage in graphene on SiO 2 probed by local mobility measurements

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 26 Pages: 263109

S Sonde, F Giannazzo, V Raineri, Rositsa Yakimova, J-R Huntzinger, Antoine Tiberj, Jean Camassel

Electrical properties of the graphene/4 H-SiC (0001) interface probed by scanning current spectroscopy

Physical Review B [American Physical Society], Volume: 80 Issue: 24 Pages: 241406

Filippo Giannazzo, Sushant Sonde, J-R Huntzinger, Antoine Tiberj, Rositza Yakimova, Vito Raineri, Jean Camassel

Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements

MRS Online Proceedings Library [Springer International Publishing], Volume: 1205 Issue: 1 Pages: 30201-30206

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Au/Si nanodroplets towards Si nanowires formation: Characterization of the thermal-induced self-organization mechanism

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032

Giuseppe Compagnini, Filippo Giannazzo, Sushant Sonde, Vito Raineri, Emanuele Rimini

Ion irradiation and defect formation in single layer graphene

Carbon [Pergamon], Volume: 47 Issue: 14 Pages: 3201-3207

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Toward an ideal Schottky barrier on 3 C-SiC

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 8 Pages: 081907

F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703

F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 789-794

S Sonde, F Giannazzo, V Raineri, E Rimini

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 868-873

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri, C Bongiorno, C Spinella

Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale

Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, C Spinella

Normal and abnormal grain growth in nanostructured gold film

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2

Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262-268

Fabrice Severac, Fuccio Cristiano, Elena Bedel-Pereira, Pier Francesco Fazzini, Wilfried Lerch, Silke Paul, Xavier Hebras, Filippo Giannazzo

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 4 Pages: 043711

F Giannazzo, S Sonde, V Raineri, E Rimini

Screening length and quantum capacitance in graphene by scanning probe microscopy

Nano letters [American Chemical Society], Volume: 9 Issue: 1 Pages: 23-29

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 305

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268

Filippo Giannazzo, Sushant Sonde, Vito Raineri, Emanuele Rimini

Nanoscale modification of graphene transport properties by ion irradiation

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1203

S SONDE, F GIANNAZZO, V RAINERI, R YAKIMOVA, J-R HUNTZINGER, A TIBERJ, J CAMASSEL

Electrical properties of the graphene

Physical review B. Condensed matter and materials physics [American Physical Society], Volume: 80 Issue: 24

F Giannazzo, S Sonde, V Raineri, E Rimini

Screening length and quantum capacitance in graphene by scanning probe microscopy

Nano letters [American Chemical Society], Volume: 9 Issue: 1 Pages: 23-29

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2

Nanoscale research letters [SpringerOpen], Volume: 3 Issue: 11 Pages: 454-460

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093706

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri

Microstructure of Au nanoclusters formed in and on SiO 2

Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

M FICHERA, F GIANNAZZO, S LIBERTINO, F SINATRA

SENSING ELEMENT FOR GLUCOSE BIOSENSOR

Proceedings of the 12th Italian Conference, Sensors and Microsystems, Napoli, Italy, 12-14 February 2007 [World Scientific], Pages: 3

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si (100): size and roughness evolution

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 024310

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Two-dimensional electron gas insulation by local surface thin thermal oxidation in Al Ga N∕ Ga N heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101

Sebania Libertino, Filippo Giannazzo, Venera Aiello, Antonino Scandurra, Fulvia Sinatra, Marcella Renis, Manuela Fichera

XPS and AFM characterization of the enzyme glucose oxidase immobilized on SiO2 surfaces

Langmuir [American Chemical Society], Volume: 24 Issue: 5 Pages: 1965-1972

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of crystal growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Elena Bruno, Salvo Mirabella, Francesco Priolo, Katja Kuitunen, Filip Tuomisto, Jonatan Slotte, Filippo Giannazzo, Corrado Bongiorno, Vito Raineri, Enrico Napolitani

He implantation to control B diffusion in crystalline and preamorphized Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 386-390

Alain Claverie, Fuccio Cristiano, Mathieu Gavelle, Fabrice Sévérac, Frédéric Cayrel, Daniel Alquier, Wilfried Lerch, Silke Paul, Leonard Rubin, Vito Raineri, Filippo Giannazzo, Hervé Jaouen, Ardechir Pakfar, Aomar Halimaoui, Claude Armand, Nikolay Cherkashim, Olivier Marcelot

Strengths and limitations of the vacancy engineering approach for the control of dopant diffusion and activation in silicon

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070

Håkan Andersson, Peter Berkesand

Linköping University Electronic Press

Policy [], Volume: 2007 Issue: 2006 Pages: 2005

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Electrical properties of self-assembled nano-Schottky diodes

Journal of Nanomaterials [Hindawi], Volume: 2008

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 11 Pages: 113701

F Giannazzo, F Roccaforte, V Raineri

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 20 Pages: 202104

Sebania Libertino, Antonino Scandurra, Venera Aiello, Filippo Giannazzo, Fulvia Sinatra, Marcella Renis, Manuela Fichera

Layer uniformity in glucose oxidase immobilization on SiO 2 surfaces

Applied Surface Science [North-Holland], Volume: 253 Issue: 23 Pages: 9116-9123

G Impellizzeri, S Mirabella, AM Piro, MG Grimaldi, F Priolo, F Giannazzo, V Raineri, E Napolitani, A Carnera

Fluorine counter doping effect in B-doped Si

Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132101

F Ruffino, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2

Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247

E Bruno, S Mirabella, E Napolitani, F Giannazzo, V Raineri, F Priolo

He implantation in Si for B diffusion control

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 181-185

F Iucolano, F Giannazzo, F Roccaforte, L Romano, MG Grimaldi, V Raineri

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339

F Ruffino, R De Bastiani, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, C Spinella, V Raineri

Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, C Bongiorno, F Roccaforte, V Raineri

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo

Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 446-449

F Giannazzo, F Roccaforte, V Raineri

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts

Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 092119

F Giannazzo, F Roccaforte, SF Liotta, V Raineri

Chapter 3-SiC Characterization and Theory-3.3 Defects-Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548

F GIANNAZZO, C BONGIORNO, F ROCCAFORTE, V RAINERI, F RUFFINO, A CANINO, MG GRIMALDI

SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES

JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

Giuseppe Arena, Ioannis Deretzis, Giuseppe Forte, Filippo Giannazzo, Antonino La Magna, Giuseppe Lombardo, Vito Raineri, Carmelo Sgarlata, Giuseppe Spoto

Electron transport properties of calix [4] arene based systems in a metal–molecule–metal junction

New Journal of Chemistry [Royal Society of Chemistry], Volume: 31 Issue: 5 Pages: 756-761

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 26 Pages: 263108

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 243113

F Roccaforte, F Iucolano, A Alberti, F Giannazzo, V Puglisi, C Bongiorno, S Di Franco, V Raineri

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si (111)

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379

F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri

Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103

S Mirabella, E Bruno, F Priolo, F Giannazzo, C Bongiorno, V Raineri, E Napolitani, A Carnera

Role of surface nanovoids on interstitial trapping in He implanted crystalline Si

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 191910

FRVRSFLF Giannazzo, F Roccaforte, V Raineri, SF Liotta

Transport localization in heterogeneous Schottky barriers of quantum-defined metal films

EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

Size effects on the electrical activation of low-energy implanted B in Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 468-472

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo, M Fedele, R Mucciato

Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 370-374

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo

Drift mobility in quantum nanostructures by scanning probe microscopy

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 4 Pages: 043117

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

Papers from the Eighth International Workshop on the Fabrication, Characterization, and Modeling of Ultra-shallow Doping Profiles in Semiconductors-Modeling Dopants and Defects-Size effects on

Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 468-472

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

Submicron confinement effect on electrical activation of B implanted in Si

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260

F Giannazzo, V Raineri, S Mirabella, E Bruno, G Impellizzeri, F Priolo

Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 54-61

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

B activation enhancement in submicron confined implants in Si

Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 13 Pages: 133110

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502

F Giannazzo

V. Raineri', F. Priolo?, D. Alquier

Gettering and Defect Engineering in Semiconductor Technology...: GADEST...: Proceedings of the... International Autumn Meeting [TTP], Volume: 108 Pages: 395

F Giannazzo, V Raineri, A La Magna, S Mirabella, G Impellizzeri, AM Piro, F Priolo, E Napolitani, SF Liotta

Carrier distribution in quantum nanostructures by scanning capacitance microscopy

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 1 Pages: 014302

GF Cerofolini, C Galati, S Reina, L Renna, F Giannazzo, V Raineri

Hydrosilation of 1‐alkyne at nearly flat, terraced, homogeneously hydrogen‐terminated silicon (100) surfaces

Surface and interface analysis [John Wiley & Sons, Ltd.], Volume: 37 Issue: 1 Pages: 71-76

F Roccaforte, F Giannazzo, C Bongiorno, S Libertino, F La Via, V Raineri

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732