Primary tabs
Scientific Productions
Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 1
Advanced approach of bulk (111) 3C-SiC epitaxial growth
Microelectronic Engineering [Elsevier], Volume: 283 Pages: 112116
Nanoscale [Royal Society of Chemistry], Volume: 16 Issue: 7 Pages: 3571-3582
Nanomaterials [MDPI], Volume: 13 Issue: 22 Pages: 2910
Microelectronic Engineering [Elsevier], Pages: 112103
Applied Surface Science [North-Holland], Volume: 631 Pages: 157563
Self-assembled BiFeO3@MIL-101 nanocomposite for antimicrobial applications under natural sunlight
Discover Nano [Springer US], Volume: 18 Issue: 1 Pages: 113
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 344 Pages: 15-22
Solar [MDPI], Volume: 3 Issue: 3 Pages: 347-361
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89
Preventing lead leakage in perovskite solar cells with a sustainable titanium dioxide sponge
Nature Sustainability [Nature Publishing Group UK], Pages: 1-10
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009
Lead Detection in a Gig-Lox TiO2 Sponge by X-ray Reflectivity
Nanomaterials [MDPI], Volume: 13 Issue: 8 Pages: 1397
Strategies to improve the catalytic activity of Fe-based catalysts for nitrogen reduction reaction
International Journal of Hydrogen Energy [Pergamon],
Amphiphilic cyclodextrin nanoparticles as delivery system for idebenone: A preformulation study
Molecules [MDPI], Volume: 28 Issue: 7 Pages: 3023
Optical Materials Express [Optica Publishing Group], Volume: 13 Issue: 3 Pages: 598-609
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506
Iron Based Catalysts for Nitrogen Reduction Reaction
Electrochemical Society Meeting Abstracts 242 [The Electrochemical Society, Inc.], Issue: 48 Pages: 1809-1809
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520
Solar RRL [], Volume: 6 Issue: 8 Pages: 2200267
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
Crystal Growth & Design [American Chemical Society], Volume: 22 Issue: 8 Pages: 4996-5003
Black‐Yellow Bandgap Trade‐Off During Thermal Stability Tests in Low‐Temperature Eu‐Doped CsPbI3
Solar RRL [], Volume: 6 Issue: 6 Pages: 2200008
Separation and Purification Technology [Elsevier], Pages: 121342
International Journal of Molecular Sciences [MDPI], Volume: 23 Issue: 5 Pages: 2874
Photo-Fenton Degradation of Methyl Orange with Dunino Halloysite as a Source of Iron
Catalysts [MDPI], Volume: 12 Issue: 3 Pages: 257
Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 5 Pages: 772
Solar RRL [Wiley], Volume: 6 Issue: 8 Pages: 2200267
Energy Technology [],
Surface Plasmons in Silicon Nanowires
Advanced Photonics Research [], Pages: 2100130
The role of stereochemistry in the inhibition of A Amyloid growth and toxicity by silybins
SMART eLAB [], Volume: 16 Pages: 21-21
Applied Surface Science [North-Holland], Volume: 557 Pages: 149752
Development of Chitosan/Cyclodextrin Nanospheres for Levofloxacin Ocular Delivery
Pharmaceutics [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 8 Pages: 1293
Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers
ACS omega [American Chemical Society], Volume: 6 Issue: 31 Pages: 20667-20675
Formation of CsPbI3 γ‐Phase at 80 °C by Europium‐Assisted Snowplow Effect
Advanced Energy and Sustainability Research [], Volume: 2 Issue: 7 Pages: 2100091
Materials [MDPI], Volume: 14 Issue: 13 Pages: 3676
Acta Materialia [Pergamon], Volume: 213 Pages: 116915
Barrier Height Tuning in Ti/4H-SiC Schottky diodes
Solid-State Electronics [Pergamon], Volume: 186 Pages: 108042
Exploring the Structural Competition between the Black and the Yellow Phase of CsPbI3
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 5 Pages: 1282
Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation
Materials [Multidisciplinary Digital Publishing Institute], Volume: 14 Issue: 16 Pages: 4769
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017
arXiv e-prints [], Pages: arXiv: 2012.08829
Stacking Faults in 3C-SiC: From the Crystal Structure, to the Electrical Behavior
ECS Meeting Abstracts [IOP Publishing], Issue: 24 Pages: 1762
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Applied Surface Science [North-Holland], Volume: 539 Pages: 148218
Journal of Applied Physics [AIP Publishing LLC], Volume: 128 Issue: 15 Pages: 155105
International Journal of Hydrogen Energy [Pergamon], Volume: 45 Issue: 51 Pages: 26583-26594
TiO2 Colloids Laser-Treated in Ethanol for Photocatalytic H2 Production
ACS Applied Nano Materials [American Chemical Society], Volume: 3 Issue: 9 Pages: 9127-9140
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition
Journal of Physics and Chemistry of Solids [Pergamon], Pages: 109722
Trehalose conjugates of silybin as prodrugs for targeting toxic Aβ aggregates
ACS Chemical Neuroscience [American Chemical Society], Volume: 11 Issue: 17 Pages: 2566-2576
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402
Applied Surface Science [North-Holland], Pages: 146656
Generation and termination of stacking faults by Inverted Domain Boundary in 3C-SiC
Crystal Growth & Design [American Chemical Society],
Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
Crystal Growth & Design [American Chemical Society], Volume: 20 Issue: 5 Pages: 3104-3111
Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Volume: 9 Pages: 100528
Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 43 Pages: 25426-25434
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
ACS omega [American Chemical Society], Volume: 4 Issue: 20 Pages: 18495-18501
The Journal of Physical Chemistry C [American Chemical Society], Volume: 123 Issue: 47 Pages: 28836-28845
Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm
ACS omega [American Chemical Society], Volume: 4 Issue: 19 Pages: 17967-17971
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 9 Pages: 1300
Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells
ACS Applied Energy Materials [American Chemical Society], Volume: 2 Issue: 9 Pages: 6218-6229
Two-dimensional defect mapping of the interface
Physical Review Materials [American Physical Society], Volume: 3 Issue: 8 Pages: 084602
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
Study on the Physico-Chemical Properties of the Si Nanowires Surface
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 6 Pages: 818
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-11
Pb clustering and PbI 2 nanofragmentation during methylammonium lead iodide perovskite degradation
Nature communications [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-11
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Volume: 216 Issue: 10 Pages: 1800597
Applied Surface Science [North-Holland], Volume: 475 Pages: 494-503
Direct observation of single organic molecules grafted on the surface of a silicon nanowire
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-8
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3407
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
Protrusions reduction in 3C-SiC thin film on Si
Journal of Crystal Growth [North-Holland], Volume: 498 Pages: 248-257
Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702
Carbon [Pergamon], Volume: 132 Pages: 141-151
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
Innovative spongy TiO2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier], Volume: 259 Pages: 658-667
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 51 Issue: 14 Pages: 145103
β-Bi2O3 reduction by laser irradiation in liquid environment.
Physical Chemistry Chemical Physics [Royal Society of Chemistry],
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
physica status solidi (a) [], Pages: 1800597
β-Bi 2 O 3 reduction by laser irradiation in a liquid environment
Physical Chemistry Chemical Physics [Royal Society of Chemistry], Volume: 20 Issue: 15 Pages: 10292-10301
Innovative spongy TiO 2 layers for gas detection at low working temperature
Sensors and Actuators B: Chemical [Elsevier],
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon],
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 2446-2453
Journal of Materials Chemistry A [The Royal Society of Chemistry],
Materials Science and Engineering: B [Elsevier], Volume: 225 Pages: 128-133
Silicon Nitride Surfaces as Active Substrate for Electrical DNA Biosensors
Sensors and Actuators B: Chemical [Elsevier], Volume: 252 Pages: 492-502
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
Inhibition of Aβ amyloid growth and toxicity by Silybins: the crucial role of stereochemistry
ACS chemical neuroscience [American Chemical Society], Volume: 8 Issue: 8 Pages: 1767-1778
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 15 Pages: 155105
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 9 Pages: 5408-5414
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
Nanotechnology [IOP Publishing], Volume: 28 Issue: 6 Pages: 065706
Journal of Materials Chemistry A [Royal Society of Chemistry], Volume: 5 Issue: 48 Pages: 25529-25538
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-15
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741
Nanoscale surface modification of Mt. Etna volcanic ashes
Geochimica et Cosmochimica Acta [Pergamon], Volume: 174 Pages: 70-84
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 20 Pages: 16720-16729
physica status solidi (a) [],
Photo-physical characterization of fluorophore Ru (bpy) 3 2+ for optical biosensing applications
Sensing and bio-sensing research [Elsevier], Volume: 6 Pages: 67-71
Electron energy-loss spectra of graphene oxide for the determination of oxygen functionalities
Carbon [Pergamon], Volume: 93 Pages: 1034-1041
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
ChemPhysChem [WILEY‐VCH Verlag], Volume: 16 Issue: 14 Pages: 3064-3071
Conductive filament structure in HfO 2 resistive switching memory devices
Solid-State Electronics [Pergamon], Volume: 111 Pages: 161-165
Microscopy and Microanalysis [Cambridge University Press], Volume: 21 Issue: S3 Pages: 1429-1430
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Molecular doping applied to Si nanowires array based solar cells
Solar Energy Materials and Solar Cells [North-Holland], Volume: 132 Pages: 118-122
Photo-physical characterization of fluorophore Ru (bpy) 32+ for optical biosensing applications
Sensing and Bio-Sensing Research [Elsevier BV], Volume: 6
RSC advances [Royal Society of Chemistry], Volume: 5 Issue: 90 Pages: 73444-73450
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied surface science [North-Holland], Volume: 314 Pages: 546-551
Room temperature evolution of gold nanodots deposited on silicon
Gold Bulletin [Springer Berlin Heidelberg], Volume: 47 Issue: 3 Pages: 185-193
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 5 Pages: 054907
Journal of Applied Physics [], Volume: 116 Issue: 5
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 13 Pages: 6576-6585
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Thin Solid Films [Elsevier], Volume: 555 Pages: 3-8
Applied surface science [North-Holland], Volume: 296 Pages: 69-78
Current-induced defect formation in multi-walled carbon nanotubes
Journal of nanoparticle research [Springer Netherlands], Volume: 16 Issue: 2 Pages: 2287
Role of the early stages of Ni‐Si interaction on the formation of transrotational Ni‐silicides
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 1 Pages: 164-168
Microscopy study of the conductive filament in HfO 2 resistive switching memory devices
Microelectronic Engineering [Elsevier], Volume: 109 Pages: 75-78
Microscopy and Microanalysis [Cambridge University Press], Volume: 19 Issue: S2 Pages: 1238-1239
Nanofabrication processes for innovative nanohole‐based solar cells
Physica status solidi (a) [], Volume: 210 Issue: 8 Pages: 1564-1570
Nanoporous Ge coated by Au nanoparticles for electrochemical application
Electrochemistry communications [Elsevier], Volume: 30 Pages: 83-86
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 3 Pages: 033513
Light scattering calculations from Au and Au/SiO 2 core/shell nanoparticles
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 47 Pages: 25-33
Morphological and electrical characterization of electrically trimmable thin-film resistors
IEEE transactions on electron devices [IEEE], Volume: 59 Issue: 12 Pages: 3549-3554
Materials Letters [North-Holland], Volume: 84 Pages: 27-30
Applied surface science [North-Holland], Volume: 258 Issue: 23 Pages: 9128-9137
Nanoporous Ge electrode as a template for nano-sized (< 5 nm) Au aggregates
Nanotechnology [IOP Publishing], Volume: 23 Issue: 39 Pages: 395604
Journal of Physics. D, Applied Physics [], Volume: 45
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 45 Issue: 35 Pages: 355301
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 3 Pages: Q52
Journal of Raman Spectroscopy [John Wiley & Sons, Ltd], Volume: 43 Issue: 8 Pages: 1018-1023
Catalysis letters [Springer US], Volume: 142 Issue: 7 Pages: 882-888
Carbon [Pergamon], Volume: 50 Issue: 6 Pages: 2365-2369
Materials Chemistry and Physics [], Volume: 133
Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2 Pages: 1108-1115
Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2-3 Pages: 1108-1115
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 4 Pages: 043510
Electrochemical and Solid State Letters [IOP Publishing], Volume: 15 Issue: 4 Pages: H105
Nanotechnology [IOP Publishing], Volume: 23 Issue: 4 Pages: 045601
Crystallization of primed amorphous Ge2Sb2Te5 studied by transmission electron microscopy
E/PCOS Proc [], Pages: 170-171
TiO2 nanofibrous chemoresistors coated with PEDOT and PANi blends for high performance gas sensors
Procedia Engineering [Elsevier], Volume: 47 Pages: 937-940
Journal of Physics D: Applied Physics [Institute of Physics Publishing Inc., The Public Ledger Building, Suite 929 150 South Independence Mall West Philadelphia PA 19106 United States], Volume: 45 Issue: 35
Amorphous-Crystal Phase Transitions in GexTe1-x Alloys
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 2 Pages: H130
Manipulation of amorphous Ge 2 Sb 2 Te 5 nano-structures in isolated and crystalline environment.
MRS Online Proceedings Library [Springer International Publishing], Volume: 1338 Issue: 1 Pages: 801-808
Ion Irradiation on Phase Change Materials
MRS Online Proceedings Library [Springer International Publishing], Volume: 1354 Issue: 1 Pages: 73-78
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
Nanoscale Research Letters [Springer New York], Volume: 6 Issue: 1 Pages: 269
Schottky barrier inhomogeneities in nickel silicide transrotational contacts
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701
Journal of Materials Research [Cambridge University Press], Volume: 26 Issue: 2 Pages: 240
Atomic structure of metal-free and catalyzed Si nanowires
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1305
Preparation of ceria and titania supported Pt catalysts through liquid phase photo-deposition
Journal of Molecular Catalysis A: Chemical [Elsevier], Volume: 333 Issue: 1-2 Pages: 100-108
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1− x Te x Thin Films
Electrochemical and Solid State Letters [IOP Publishing], Volume: 13 Issue: 9 Pages: H317
Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202
Crystallization of ion amorphized Ge 2 Sb 2 Te 5 thin films in presence of cubic or hexagonal phase
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 11 Pages: 113521
Heteroepitaxial growth and faceting of Ge nanowires on Si (111) by electron-beam evaporation
Electrochemical and Solid State Letters [IOP Publishing], Volume: 13 Issue: 5 Pages: K53
Morphological and electrical characterization of SixCryCzBv thin films
Microelectronic engineering [Elsevier], Volume: 87 Issue: 3 Pages: 430-433
Structural properties of annealed SiOx
Journal of Physics: Conference Series [IOP Publishing], Volume: 209 Issue: 1 Pages: 012042
Role of linear carbon chains in the aggregation of copper, silver, and gold nanoparticles
The Journal of Physical Chemistry C [American Chemical Society], Volume: 114 Issue: 2 Pages: 907-915
Synthesis of crystalline Si quantum dots by millisecond laser irradiation of SiO x N y layers
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 2 Pages: 023703
Synthesis of crystalline Si quantum dots by millisecond laser irradiation of SiOxNy layers
technology [], Volume: 7 Pages: 8
High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates
Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S165-S169
Stress [], Volume: 7 Pages: 12
Crystallization of ion amorphized Ge 2 Sb 2 Te 5 in nano-structured thin films
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1251
Diamond and related materials [Elsevier], Volume: 18 Issue: 12 Pages: 1440-1449
Role of linear carbon chains in the aggregation of copper, silver, and gold nanoparticles
The Journal of Physical Chemistry C [American Chemical Society], Volume: 114 Issue: 2 Pages: 907-915
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493
Applied Physics A [Springer-Verlag], Volume: 97 Issue: 1 Pages: 63-72
Applied Catalysis A: General [Elsevier], Volume: 367 Issue: 1-2 Pages: 138-145
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 11 Pages: 111905
Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703
Reliability of charge trapping memories with high-k control dielectrics
Microelectronic Engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1796-1803
Crystallization of sputtered-deposited and ion implanted amorphous Ge 2 Sb 2 Te 5 thin films
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 12 Pages: 123502
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 1 Issue: 2 Pages: 87-92
The zero field self-organization of cobalt/surfactant nanocomposite thin films
Nanotechnology [IOP Publishing], Volume: 20 Issue: 22 Pages: 225605
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 9 Pages: 093506
Heteroepitaxy of 3 C-SiC on different on-axis oriented silicon substrates
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 8 Pages: 084910
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304
Quantitative study of the Si/SiO 2 phase separation in substoichiometric silicon oxide films
Materials Science and Engineering: B [Elsevier], Volume: 159 Pages: 80-82
Normal and abnormal grain growth in nanostructured gold film
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1160
Evolution [], Volume: 135 Pages: 140
Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2393-2399
Solid State Electronics [], Volume: 52 Pages: 1838-1838
Photochemical synthesis of copper nanoparticles incorporated in poly (vinyl pyrrolidone)
Journal of Nanoparticle Research [Springer Netherlands], Volume: 10 Issue: 7 Pages: 1183-1192
Microstructure of Au nanoclusters formed in and on SiO 2
Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598
Nano-patterning with block copolymers
Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 693-698
Growth of 3C-SiC on Si: Influence of Process Pressure
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211
Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 215
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 243
Integration of CVD silicon nanocrystals in a 32áMb NOR flash memory
Solid-State Electronics [Pergamon], Volume: 52 Issue: 9 Pages: 1452-1459
Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory
Solid-State Electronics [Pergamon], Volume: 52 Issue: 9 Pages: 1452-1459
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 023501
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101
Heteroepitaxial growth of (111) 3 C-Si C on (110) Si substrate by second order twins
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 22 Pages: 224102
Localized electrical characterization of the giant permittivity effect in Ca Cu 3 Ti 4 O 12 ceramics
Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 18 Pages: 182907
Surface effects on the growth of solution processed pentacene thin films
Surface science [North-Holland], Volume: 602 Issue: 4 Pages: 993-1005
He implantation to control B diffusion in crystalline and preamorphized Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 386-390
Synthesis and luminescence properties of erbium silicate thin films
Materials Science and Engineering: B [Elsevier], Volume: 146 Issue: 1-3 Pages: 29-34
Light Emission from Si Nanostructures
Microscopy of semiconducting materials: proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK [Springer Verlag], Pages: 291
Realization of hybrid silicon core/silicon nitride shell nanodots by LPCVD for NVM application
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1071
Pulsed laser deposition of multiwalled carbon nanotubes thin films
Applied Surface Science [North-Holland], Volume: 254 Issue: 4 Pages: 1260-1263
Nickel nanostructured materials from liquid phase photodeposition
Journal of Nanoparticle Research [Kluwer Academic Publishers], Volume: 9 Issue: 4 Pages: 611-619
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 2 Pages: 023518
Phase change mechanisms in Ge 2 Sb 2 Te 5
Journal of applied physics [American Institute of Physics], Volume: 102 Issue: 1 Pages: 013516
Efficient luminescence and energy transfer in erbium silicate thin films
Advanced Materials [WILEY‐VCH Verlag], Volume: 19 Issue: 12 Pages: 1582-1588
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103508
Formation, evolution and photoluminescence properties of Si nanoclusters
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 19 Issue: 22 Pages: 225003
Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18 Pages: 183101
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 270-274
Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4-5 Pages: 777-780
Effects of dopants on the amorphous-to-fcc transition in Ge 2 Sb 2 Te 5 thin films
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 352-354
Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814
Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 063544
Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306
Carbon aligned nanocolumns by RF-Magnetron sputtering: The influence of the growth parameters
Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 37 Issue: 1-2 Pages: 231-235
Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiO x
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 486-489
He induced nanovoids for point-defect engineering in B-implanted crystalline Si
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 2 Pages: 023515
Role of the internal strain on the incomplete Si
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247
SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES
JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 171-174
The influence of substrate on the properties of Er 2 O 3 films grown by magnetron sputtering
Journal of luminescence [North-Holland], Volume: 121 Issue: 2 Pages: 233-237
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 12 Pages: 123706
The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering
Journal of luminescence [North-Holland], Volume: 121 Issue: 2 Pages: 233-237
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 10 Pages: 103533
Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379
Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si
Acta Crystallographica Section B: Structural Science [International Union of Crystallography], Volume: 62 Issue: 5 Pages: 729-736
Critical nickel thickness to form silicide transrotational structures on [001] silicon
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 10 Pages: 102105
Optical and structural properties of Er 2 O 3 films grown by magnetron sputtering
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 1 Pages: 013502
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 191910
Electroluminescence and transport properties in amorphous silicon nanostructures
Nanotechnology [IOP Publishing], Volume: 17 Issue: 5 Pages: 1428
Boron interaction with extended defects induced by He–H co-implantation in Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 266-270
Thermal evolution and photoluminescence properties of nanometric Si layers
Nanotechnology [IOP Publishing], Volume: 16 Issue: 12 Pages: 3012
Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
Acta Crystallographica Section B: Structural Science [International Union of Crystallography], Volume: 61 Issue: 5 Pages: 486-491
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 4 Pages: 044102
Journal of applied physics [American Institute of Physics], Volume: 98 Issue: 1 Pages: 013515
Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502
Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 21 Pages: 211911
Enhanced boron diffusion in excimer laser preannealed Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 151902
Shallow BF 2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 151904
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-4
Fully solvent-free preparation of MAPbI3 films for photovoltaic application
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19) [],
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 3B. 3-1-3B. 3-5
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 160-164
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 417-421
Surface plasmon resonances in silicon nanowires with varying geometry
European Materials Research Society 2021 Fall Meeting: Symposium R: Nanomaterials-electronics &-photonics [],
Study of the surface plasmon resonances in silicon nanowires with diameters less than 100 nm
MRS-Materials Research Society Spring Meeting & Exhibit 2021 [],
Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 433-438
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 346-349
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 124-127
Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1015-1018
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 685-688
Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 143-147
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 623-626
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298
Structural characterization of graphene grown by thermal decomposition of off-axis 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 141-148
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 149-152
Micro-and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 637-640
Properties of SnO2: F/p-type aSi: H interface in thin film a-Si: H solar cells
The Sun New Energy Conference SuNEC 2011 [IT],
Temperature dependent structural evolution of graphene layers on 4H-SiC (0001)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 797-800
Surface corrugation and stacking misorientation in multilayers of graphene on Nickel
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 178 Pages: 125-129
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 413-416
On the “step bunching” phenomena observed on etched and homoepitaxially grown 4H silicon carbide
Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 358-361
Proceedings of 2010 International Symposium on VLSI Technology, System and Application [IEEE], Pages: 54-55
A study of structural defects in 3C-SiC hetero-epitaxial films
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 371-374
3C-SiC heteroepitaxial growth on inverted silicon pyramids (ISP)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 135-138
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 713-716
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 493-498
Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 1211-1214
2009 IEEE International Memory Workshop [IEEE], Pages: 1-4
High quality single crystal 3C-SiC (111) films grown on Si (111)
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 145-148
Towards Large Area (111) 3C-SiC Films Grown on off-oriented (111) Si
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 149-152
Growth of 3C-SiC on Si: influence of process pressure
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 211-214
Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 215-218
Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 243-246
Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 967-970
Strauctural properties of Si nanocrystals: implications for light emitting devices fabrication
2008 5th IEEE International Conference on Group IV Photonics [IEEE], Pages: 38-40
Integration of silicon nanocrystal memory arrays with HfAlOx based interpoly dielectric
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design [IEEE], Pages: 64-67
PENTACENE THIN FILMS BY SOLUTION METHODS: NEW ROUTES FOR PLASTIC ELECTRONICS
2ND EUROPEAN CHEMISTRY CONGRESS [],
Solution processed pentacene thin films: new routes for building-up plastic field effect transistors
XXXVII Congresso Nazione Divisione di Chimica Fisica [],
2007 IEEE International Electron Devices Meeting [IEEE], Pages: 453-456
Advantages of the FinFET architecture in SONOS and nanocrystal memory devices
2007 IEEE International Electron Devices Meeting [IEEE], Pages: 921-924
Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001] Si
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 151-153
Low voltage hot-carrier programming of ultra-scaled SOI Finflash memories
ESSDERC 2007-37th European Solid State Device Research Conference [IEEE], Pages: 414-417
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop [IEEE], Pages: 42-43
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop [IEEE], Pages: 44-45
XXXVI CONGRESSO NAZIONE DIVISIONE DI CHIMICA FISICA [], Pages: XX-XX
Carbonization study of different silicon orientations
Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 171-174
In-depth investigation of Hf-based high-k dielectrics as storage layer of charge-trap NVMs
2006 International Electron Devices Meeting [IEEE], Pages: 1-4
Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide
2006 European Solid-State Device Research Conference [IEEE], Pages: 246-249
In-depth investigation of hfalo layers as interpoly dielectrics of future flash memories
2006 European Solid-State Device Research Conference [IEEE], Pages: 242-245
In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap
NVMsIEDM 2006 [XX], Pages: XX
Impact of hydrogen implantation on helium implantation induced defects
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 309-314
Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 729-732
Structural and compositional investigation of high k praseodymium oxide rums deposited by MOCVD
Microscopy of Semiconducting Materials 2003 [CRC Press], Pages: 409-412
Book of Abstracts-EPCOS 2016 [],
GraphITA 2011 [Springer, Berlin, Heidelberg], Pages: 99-107
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer, Berlin, Heidelberg], Pages: 415-416
Light Emission from Si Nanostructures
Microscopy of Semiconducting Materials 2007 [Springer, Dordrecht], Pages: 291-300
Amorphous-to-fcc Transition in GeSbTe Alloys
Materials for Information Technology [Springer, London], Pages: 189-196