Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the PhD from the University of Göttingen (Germany) in 1999. In 2000/2001 he was visiting scientist at the University of Göttingen, and advisor at STMicroelectronics (Italy). In December 2001 he joined CNR-IMM as a Researcher, where he became Senior Researcher in 2007, and Research Director in 2020. His research interests are in the field of wide band gap semiconductors (e.g., SiC, GaN,..) materials and devices processing for power electronics devices. He is co-author of more than 300 papers in international journals and conference proceedings, several review articles, 10 book chapters, 3 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences. He has been chairman of international conferences on WBG semiconductors (HeteroSiC-WASMPE 2009, WOCSDICE 2011, ICSCRM2015), and he is member of the Steering Committee of the ECSCRM and EXMATEC. He is or has been responsible for the CNR-IMM unit of European and National projects on wide band gap semiconductors (Marie Curie RTN MANSiC, Marie Curie ITN NetFISiC, Eniac-JU Last Power, PON Ambition Power, ECSEL-JU WInSiC4AP, Reaction, EleGaNTe, GaN4AP) bilateral collaborations with other European institutions, and industrial research contracts.