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Surname: 
Francesco
Firstname: 
La Via
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
+39 095 5968229
Activity: 

Francesco La Via was born in Catania, Italy, in September 1961. He received the M.S. degree in physics from Catania University, Catania, Italy, in 1985. From 1985 to 1990, he had a fellowship at STM, Catania. In 1990, he joined the CNR IMM in Catania as a researcher. During this time, he was a Visiting Scientist at Philips NatLab, Eindhoven, The Netherlands. In 2001 he became senior researcher of the CNR IMM and he is responsible of the research group that work on the new metallization schemes for silicon and silicon carbide. From 2003 he is responsible of the division of CNR-IMM that developed new processes for silicon carbide epitaxy and hetero-epitaxy. He is responsible of several industrial research projects in this field. In this period he has published more than 250 papers on JCR journals and 4 edited books. He has presented eleven invited contributions to international conferences and has organized several conferences and tutorials. He has 6 patents on SiC technology and growth. The main research interests are in the field of silicon carbide growth, power devices, detectors and MEMS.

Curriculum (PDF): 

Scientific Productions

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Pages: 100528

M Rebai, D Rigamonti, S Cancelli, G Croci, G Gorini, E Perelli Cippo, O Putignano, M Tardocchi, C Altana, M Angelone, G Borghi, M Boscardin, C Ciampi, GAP Cirrone, A Fazzi, D Giove, L Labate, G Lanzalone, F La Via, S Loreti, A Muoio, P Ottanelli, G Pasquali, M Pillon, SMR Puglia, A Santangelo, A Trifiro, S Tudisco

New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Pages: 162637

Gabriele Bonaventura, Rosario Iemmolo, Valentina La Cognata, Massimo Zimbone, Francesco La Via, Maria Elena Fragalà, Maria Luisa Barcellona, Rosalia Pellitteri, Sebastiano Cavallaro

Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells

Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-13

M Zimbone, M Zielinski, EG Barbagiovanni, C Calabretta, F La Via

3C-SiC grown on Si by using a Si1-xGex buffer layer

Journal of Crystal Growth [North-Holland], Volume: 519 Pages: 1-6

Mohammad Beygi, John T Bentley, Christopher L Frewin, Cary A Kuliasha, Arash Takshi, Evans K Bernardin, Francesco La Via, Stephen E Saddow

Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

Micromachines [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 7 Pages: 430

C Ciampi, G Pasquali, C Altana, M Bini, M Boscardin, L Calcagno, G Casini, GAP Cirrone, A Fazzi, D Giove, G Gorini, L Labate, F La Via, G Lanzalone, G Litrico, A Muoio, P Ottanelli, G Poggi, SMR Puglia, M Rebai, S Ronchin, A Santangelo, AA Stefanini, A Trifirò, S Tudisco, M Zimbone, Sicilia Collaboration

Nuclear fragment identification with ΔE-E telescopes exploiting silicon carbide detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 925 Pages: 60-69

M Spera, G Greco, R Lo Nigro, C Bongiorno, F Giannazzo, M Zielinski, F La Via, F Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Mojmír Meduňa, Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si (0 0 1) wafers

Journal of Crystal Growth [North-Holland], Volume: 507 Pages: 70-76

Marco Masullo, Roberto Bergamaschini, Marco Albani, Thomas Kreiliger, Marco Mauceri, Danilo Crippa, Francesco La Via, Francesco Montalenti, Hans von Känel, Leo Miglio

Growth and Coalescence of 3C-SiC on Si (111) Micro-Pillars by a Phase-Field Approach

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 19 Pages: 3223

Ruggero Anzalone, Massimo Zimbone, Cristiano Calabretta, Marco Mauceri, Alessandra Alberti, Riccardo Reitano, Francesco La Via

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3293

Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3362

Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3407

Philipp Schuh, Francesco la Via, Marco Mauceri, Marcin Zielinski, Peter J Wellmann

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 13 Pages: 2179

Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J Wellmann

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 15 Pages: 2353

Mojmír Meduňa, Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

X-Ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si (001) wafers

Journal of Crystal Growth [North-Holland],

Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via

Protrusions reduction in 3C-SiC thin film on Si

Journal of Crystal Growth [North-Holland], Volume: 498 Pages: 248-257

Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.

Sensors [Multidisciplinary Digital Publishing Institute], Volume: 18 Issue: 7 Pages: 2289

G Litrico, S Tudisco, F La Via, C Altana, C Agodi, L Calcagno, F Cappuzzello, D Carbone, M Cavallaro, GAP Cirrone, G Lanzalone, A Muoio, S Privitera, V Scuderi

Silicon Carbide detectors for nuclear physics experiments at high beam luminosity

Journal of Physics: Conference Series [IOP Publishing], Volume: 1056 Issue: 1 Pages: 012032

Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio

Solving the critical thermal bowing in 3C-SiC/Si (111) by a tilting Si pillar architecture

Journal of Applied Physics [AIP Publishing], Volume: 123 Issue: 18 Pages: 185703

M Cavallaro, F Cappuzzello, C Agodi, L Acosta, N Auerbach, J Bellone, R Bijker, D Bonanno, D Bongiovanni, T Borello-Lewin, I Boztosun, V Branchina, MP Bussa, S Calabrese, L Calabretta, A Calanna, D Calvo, D Carbone, ER Chávez Lomelí, A Coban, M Colonna, G D’Agostino, G De Geronimo, F Delaunay, N Deshmukh, PN De Faria, C Ferraresi, JL Ferreira, P Finocchiaro, M Fisichella, A Foti, G Gallo, U Garcia, G Giraudo, V Greco, A Hacisalihoglu, J Kotila, F Iazzi, R Introzzi, G Lanzalone, A Lavagno, F La Via, JA Lay, H Lenske, R Linares, G Litrico, F Longhitano, D Lo Presti, J Lubian, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, H Petrascu, F Pinna, S Reito, D Rifuggiato, MRD Rodrigues, AD Russo, G Russo, G Santagati, E Santopinto, O Sgouros, SO Solakci, G Souliotis, V Soukeras, A Spatafora, D Torresi, S Tudisco, RIM Vsevolodovna, RJ Wheadon, A Yildirin, VAB Zagatto

Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay

Journal of Physics: Conference Series [IOP Publishing], Volume: 966 Issue: 1 Pages: 012021

Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

physica status solidi (a) [], Pages: 1800597

P Schuh, M Schöler, M Wilhelm, Mikael Syväjärvi, G Litrico, F La Via, M Mauceri, PJ Wellmann

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Journal of Crystal Growth [North-Holland], Volume: 478 Pages: 159-162

T Han, S Privitera, RG Milazzo, C Bongiorno, S Di Franco, F La Via, X Song, Y Shi, M Lanza, S Lombardo

Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures

Materials Science and Engineering: B [Elsevier], Volume: 225 Pages: 128-133

M Schöler, P Schuh, G Litrico, F La Via, M Mauceri, PJ Wellmann

Evaluation of defects in 3C-SiC grown by Sublimation Epitaxy using 3C-SiC-on-Si seeding layers

The 5th International Workshop on LEDs and Solar Applications [], Pages: 6

R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, F La Via

Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19

Nicolò Piluso, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via

4H-SiC defects evolution by thermal processes

Materials Science Forum [Trans Tech Publications Ltd.], Volume: 897 Pages: 181-184

Grazia Litrico, Nicolò Piluso, Francesco La Via

Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

Materials Science Forum [Trans Tech Publications Ltd.], Volume: 897 Pages: 303

Ph Schuh, M Arzig, G Litrico, F La Via, M Mauceri, PJ Wellmann

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600429

Rachela G Milazzo, Stefania Privitera, Grazia Litrico, Silvia Scalese, Salvatore Mirabella, Francesco La Via, Salvatore Lombardo, Emanuele Rimini

Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC

The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 8 Pages: 4304-4311

Stefania MS Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

Applied Physics Express [IOP Publishing], Volume: 10 Issue: 3 Pages: 036601

SMS Privitera, AM Mio, E Smecca, A Alberti, W Zhang, R Mazzarello, J Benke, C Persch, F La Via, E Rimini

Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage

Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094103

F Cappuzzello, C Agodi, E Aciksoz, L Acosta, X Aslanouglou, N Auerbach, R Bijker, D Bonanno, D Bongiovanni, T Borello, S Boudhaim, ML Bouhssa, I Boztosun, L Calabretta, A Calanna, D Carbone, M Cavallaro, D Calvo, ER Chávez Lomelí, M Colonna, G D'Agostino, N Deshmukh, PN de Faria, A Ferrero, A Foti, P Finocchiaro, PRS Gomes, V Greco, A Hacisalihoglu, Z Housni, A Khouaja, J Inchaou, G Lanzalone, F La Via, JA Lay, H Lenske, R Linares, J Lubian, F Iazzi, R Introzzi, A Lavagno, D Lo Presti, N Medina, DR Mendes, A Muoio, JRB Oliveira, A Pakou, L Pandola, D Rifuggiato, MRD Rodrigues, G Santagati, E Santopinto, L Scaltrito, O Sgouros, SO Solakcı, V Soukeras, S Tudisco, RIM Vsevolodovna, V Zagatto

The nuclear matrix elements of 0vββ decay and the NUMEN project at INFN-LNS

Journal of Physics: Conference Series [IOP Publishing], Volume: 730 Issue: 1 Pages: 012006

M Zimbone, G Cacciato, MA Buccheri, R Sanz, N Piluso, R Reitano, F La Via, MG Grimaldi, V Privitera

Photocatalytical activity of amorphous hydrogenated TiO 2 obtained by pulsed laser ablation in liquid

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 28-31

N Piluso, E Fontana, MA Di Stefano, G Litrico, S Privitera, A Russo, S Lorenti, S Coffa, F La Via

Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

MRS Advances [Materials Research Society], Volume: 1 Issue: 55 Pages: 3673-3678

F La Via, G Litrico, R Anzalone, A Severino, M Salanitri, S Coffa

High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

MRS Advances [Materials Research Society], Volume: 1 Issue: 54 Pages: 3643-3647

A Muoio, C Agodi, DL Bonanno, DG Bongiovanni, S Calabrese, L Calcagno, D Carbone, M Cavallaro, F Cappuzzello, A Foti, P Finocchiaro, G Lanzalone, F La Via, F Longhitano, D Lo Presti, L Pandola, S Privitera, S Tudisco

Silicon carbide detectors study for NUMEN project

EPJ Web of Conferences [EDP Sciences], Volume: 117 Pages: 10006

R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, S Di Franco, F La Via

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (001) for high-power MOSFET applications

Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19

L Calcagno, P Musumeci, M Zimbone, F La Via

Laser plasma monitored by silicon carbide detectors

Radiation Effects and Defects in Solids [Taylor & Francis], Volume: 170 Issue: 4 Pages: 303-324

R Anzalone, G D’Arrigo, M Camarda, N Piluso, F La Via

Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane

Dim [], Volume: 8 Pages: x104

Massimo Camarda, Giuseppe Fisicaro, Ruggero Anzalone, Silvia Scalese, Alessandra Alberti, Francesco La Via, Antonino La Magna, Andrea Ballo, Gianluca Giustolisi, Luigi Minafra, Francesco P Cammarata, Valentina Bravatà, Giusi I Forte, Giorgio Russo, Maria C Gilardi

Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes

Biomedical engineering online [BioMed Central], Volume: 13 Issue: 1 Pages: 71

Massimo Camarda, Antonino La Magna, Francesco La Via

Monte Carlo study of the early growth stages of 3C‐SiC on misoriented< 11‐20> and< 1‐100> 6H‐SiC substrates: role of step‐island interaction

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1606-1610

N Piluso, M Camarda, F La Via

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Journal of Applied Physics [AIP Publishing], Volume: 116 Issue: 16 Pages: 163506

Hans von Känel, Fabio Isa, Claudiu V Falub, Eszter Judit Barthazy, Elisabeth Müller Gubler, Daniel Chrastina, Giovanni Isella, Thomas Kreiliger, Alfonso Gonzalez Taboada, Mojmir Meduna, Rolf Kaufmann, Antonia Neels, Alex Dommann, Philippe Niedermann, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Danilo Crippa, Francesco La Via, Ruggero Anzalone, Nicolo Piluso, Roberto Bergamaschini, Anna Marzegalli, Leo Miglio

Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 6 Pages: 631-648

Hans von Känel, Fabio Isa, Claudiu V Falub, Eszter Judit Barthazy, Elisabeth Müller Gubler, Daniel Chrastina, Giovanni Isella, Thomas Kreiliger, Alfonso Gonzalez Taboada, Mojmir Meduna, Rolf Kaufmann, Antonia Neels, Alex Dommann, Philippe Niedermann, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Danilo Crippa, Francesco La Via, Ruggero Anzalone, Nicolo Piluso, Roberto Bergamaschini, Anna Marzegalli, Leo Miglio

(Invited) Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 6 Pages: 631-648

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Silvia Scalese, Francesco La Via

Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si 1-x Ge x/Si (001) heterostructures.

Materials Science Forum [], Volume: 806

Stefania Privitera, Giuseppe D’Arrigo, Antonio M Mio, Nicolò Piluso, Francesco La Via, Emanuele Rimini

Electrically Trimmable Phase Change Ge 2 Sb 2 Te 5 Resistors With Tunable Temperature Coefficient of Resistance

IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 8 Pages: 2879-2885

Marco Mauceri, Antonino Pecora, Grazia Litrico, Carmelo Vecchio, Marco Puglisi, Danilo Crippa, Nicolo’ Piluso, Massimo Camarda, Francesco La Via

4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6.

Materials Science Forum [],

R Anzalone, G D’Arrigo, M Camarda, N Piluso, F La Via

Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane

Materials Research Express [IOP Publishing], Volume: 1 Issue: 1 Pages: 015912

R Anzalone, A Alberti, F La Via

Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction

Materials Letters [North-Holland], Volume: 118 Pages: 130-133

L Calcagno, P Musumeci, M Cutroneo, L Torrisi, F La Via, J Ullschmied

MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

Journal of Physics: Conference Series [IOP Publishing], Volume: 508 Issue: 1 Pages: 012009

R Grasso, S Tudisco, A Anzalone, F Musumeci, A Scordino, A Spitaleri, R Anzalone, G D’Arrigo, F LaVia

A new position sensitive anode for plasmas diagnostic

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 720 Pages: 122-124

Stephen E Saddow, Yaroslav Koshka, Francesco La Via, Edward Sanchez, Hidezaku Tsuchida, Feng Zhao

Introduction to Silicon Carbide—Materials, Processing and Devices–ADDENDUM

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 5 Pages: 786-786

N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, F La Via

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Journal of Raman Spectroscopy [], Volume: 44 Issue: 2 Pages: 299-306

Francesco La Via, Giuseppe D’Arrigo, Andrea Severino, Nicolò Piluso, Marco Mauceri, Christopher Locke, Stephen E Saddow

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 94-103

Ruggero Anzalone, Massimo Camarda, Christopher Locke, Josè Carballo, Nicolò Piluso, Antonino La Magna, Alex A Volinsky, Stephen E Saddow, Francesco La Via

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 129-135

Massimo Camarda, Ruggero Anzalone, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 104-112

M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, A Velyhan, J Ullschmied, L Calcagno

High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 87-93

Peter Wellmann, Mikael Syväjärvi, Michael Kneissel, Rongmin Wang, P Hens, G Wagner, A Hölzing, R Hock, P Wellmann, V Jokubavicius, R Liljedahl, JW Sun, M Kaiser, S Sano, R Yakimova, S Kamiyama, M Syväjärvi, Teresa de los Arcos, Stefan Cwik, Andrian P Milanov, Vanessa Gwildies, Harish Parala, Tristan Wagner, Alexander Birkner, Detlef Rogalla, Hans-Werner Becker, Jörg Winter, Alfred Ludwig, Roland A Fischer, Anjana Devi, S Biondo, M Lazar, L Ottaviani, W Vervisch, V Le Borgne, MA El Khakani, J Duchaine, F Milesi, O Palais, D Planson, N Piluso, R Anzalone, M Camarda, A Severino, G D'Arrigo, F La Via

Editorial for E-MRS Symposium Q

Science [], Volume: 523 Pages: 1-80

N Piluso, R Anzalone, M Camarda, A Severino, G D'Arrigo, F La Via

Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy

Thin Solid Films [Elsevier], Volume: 522 Pages: 20-22

A Canino, N Piluso, F La Via

Large area optical characterization of 3 and 4 inches 4H–SiC wafers

Thin Solid Films [Elsevier], Volume: 522 Pages: 30-32

Massimo Camarda, Ruggero Anzalone, Antonino La Magna, Francesco La Via

Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties

Thin Solid Films [Elsevier], Volume: 522 Pages: 26-29

Massimo Camarda

Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes

Surface Science [North-Holland], Volume: 606 Issue: 15-16 Pages: 1263-1267

I Deretzis, M Camarda, F La Via, A La Magna

Electron backscattering from stacking faults in SiC by means of\textit {ab initio} quantum transport calculations

arXiv preprint arXiv:1206.6600 [],

I Deretzis, M Camarda, F La Via, A La Magna

Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations

Physical Review B [American Physical Society], Volume: 85 Issue: 23 Pages: 235310

Andrea Severino, Nicolò Piluso, Antonio Marino, Francesco La Via

Crystal recovery from Al‐implantation induced damaging in 3C‐SiC films

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 6 Issue: 5 Pages: 226-228

S Scalese, V Scuderi, S Bagiante, S Gibilisco, G Faraci, N Piluso, F La Via, V Privitera

Morphology and distribution of carbon nanostructures in a deposit produced by arc discharge in liquid nitrogen

Physica E: Low-dimensional Systems and Nanostructures [North-Holland], Volume: 44 Issue: 6 Pages: 1005-1008

Francesco La Via

Silicon Carbide Epitaxy

Research Signpost [],

R Anzalone, M Camarda, A Auditore, N Piluso, A Severino, A La Magna, G D’Arrigo, F La Via

Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 15 Issue: 6 Pages: H182-H184

Andrea Severino, M Mauceri, R Anzalone, A Canino, N Piluso, C Vecchio, M Camarda, F La Via

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1433

CW Locke, A Severino, F La Via, M Reyes, M Register, SE Saddow

SiC films and coatings: Amorphous polycrystalline and single crystal forms

Silicon Carbide Biotechnology [], Pages: 17-61

Massimo Camarda, Francesco La Via, Antonino La Magna

Study of the connection between stacking faults evolution and step kinetics in misoriented 4H-SiC epitaxial growths

Surface Science [North-Holland], Volume: 605 Issue: 21-22 Pages: L67-L69

Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Andrea Canino, Francesco La Via, Antonino La Magna

Correlation between microstructure deflections and film/substrate curvature under generalized stress fields

arXiv preprint arXiv:1110.4727 [],

Andrea Severino, Christopher Locke, Francesco La Via, Stephen E Saddow

(Invited) High Quality 3C-SiC for MOS Applications

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 8 Pages: 273-282

Andrea Severino, Christopher Locke, Francesco La Via, Stephen E Saddow

High quality 3C-SiC for MOS applications

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 8 Pages: 273-282

R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’Arrigo

Publisher’s Note: Defect Influence on Heteroepitaxial 3C-SiC Young’s Modulus [Electrochem. Solid-State Lett., 14, H161 (2011)]

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 7 Pages: S3-S3

Andrea Severino, Christopher Locke, Ruggero Anzalone, Massimo Camarda, Nicolò Piluso, Antonino La Magna, Stephen Saddow, Giuseppe Abbondanza, Giuseppe D'Arrigo, Francesco La Via

3C-SiC film growth on Si substrates

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 6 Pages: 99-116

Ruggero Anzalone, Massimo Camarda, Giuseppe D'Arrigo, Nicolò Piluso, Andrea Severino, Andrea Canino, Antonino La Magna, Francesco La Via

Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 6 Pages: 123-131

R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo

Defect influence on heteroepitaxial 3C-SiC Young’s modulus

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 4 Pages: H161-H162

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco La Via

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4, 4) and (3, 5) Stacking Faults

Applied physics express [IOP Publishing], Volume: 4 Issue: 2 Pages: 025802

Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G Feng, T Kimoto, M Aoki, H Kawanowa

Structural and electronic characterization of (2, 3 3) bar-shaped stacking fault in 4H-SiC epitaxial layers

Applied Physics Letters [AIP], Volume: 98 Issue: 5 Pages: 051915

La Via. Anzalone, D'Arrigo, Camarda, Locke, Saddow

Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application

Journal of Microelectromechanical Systems [], Volume: 20 Issue: 5751197 Pages: 745-752

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco La Via

025802 First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4, 4) and (3, 5) Stacking Faults

Applied Physics Express [], Volume: 4 Issue: 2

Andrea Canino, Massimo Camarda, Francesco La Via

High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 14 Issue: 11 Pages: H457-H459

A Severino, F La Via

Microtwin reduction in 3C–SiC heteroepitaxy

Applied Physics Letters [AIP], Volume: 97 Issue: 18 Pages: 181916

N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via

Optical characterization of bulk mobility in 3C‐SiC films grown on different orientation of Si substrates

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 99-102

M Camarda, A Severino, A LaMagna, F La Via

Monte Carlo study of morphological surface instabilities during misoriented epitaxial growth of cubic and hexagonal polytypes

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 19-22

N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via

Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates

Applied Physics Letters [AIP], Volume: 97 Issue: 14 Pages: 142103

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Stacking faults evolution during epitaxial growths: Role of surface the kinetics

Surface Science [North-Holland], Volume: 604 Issue: 11-12 Pages: 939-942

R Anzalone, M Camarda, C Locke, D Alquier, A Severino, M Italia, D Rodilosso, C Tringali, A La Magna, G Foti, SE Saddow, F La Via, G D’Arrigo

Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 157 Issue: 4 Pages: H438-H442

Massimo Camarda, Antonino La Magna, Andrea Severino, Francesco La Via

Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S159-S161

A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, G Condorelli, MA Di Stefano, B Cafra, A La Magna, F La Via

High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S165-S169

Maurizio Masi, Alessandro Fiorucci, Massimo Camarda, Antonino La Magna, Francesco La Via

Multiscale simulation for epitaxial silicon carbide growth by chlorides route

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S6-S11

Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Francesco La Via

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Andrea Canino, Massimo Camarda, Antonino La Magna, Francesco La Via

Single Shockley faults evolution under UV optical pumping

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

F La Via, M Camarda, A La Magna

APPLIED PHYSICS REVIEWS

J. Appl. Phys [], Volume: 13511 Issue: 10.1063/1.3457840 Pages: 108

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Diamond and Related Materials [Elsevier], Volume: 18 Issue: 12 Pages: 1440-1449

A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, C Bongiorno, A La Magna, F La Via

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films

Applied Physics Letters [AIP], Volume: 95 Issue: 11 Pages: 111905

Massimo Camarda, Antonino La Magna, Francesco La Via

Monte Carlo study of the step flow to island nucleation transition for close packed structures

Surface Science [North-Holland], Volume: 603 Issue: 14 Pages: 2226-2229

R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, S Saddow, F La Via

Heteroepitaxy of 3 C-SiC on different on-axis oriented silicon substrates

Journal of Applied Physics [AIP], Volume: 105 Issue: 8 Pages: 084910

A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, M Mauceri, A La Magna, F La Via

Effect of the miscut direction in (111) 3 C-Si C film growth on off-axis (111) Si

Applied physics letters [AIP], Volume: 94 Issue: 10 Pages: 101907

G Litrico, G Izzo, L Calcagno, F La Via, G Foti

Low temperature reaction of point defects in ion irradiated 4H–SiC

Diamond and Related Materials [Elsevier], Volume: 18 Issue: 1 Pages: 39-42

F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, G Abbondanza, L Calcagno, G Foti, D Crippa

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Journal of Crystal Growth [North-Holland], Volume: 311 Issue: 1 Pages: 107-113

G Izzo, G Litrico, L Calcagno, G Foti, F La Via

Electrical properties of high energy ion irradiated 4 H-SiC Schottky diodes

Journal of Applied Physics [AIP], Volume: 104 Issue: 9 Pages: 093711

R Anzalone, C Bongiorno, A Severino, G D’Arrigo, G Abbondanza, G Foti, F La Via

Heteroepitaxial growth of (111) 3 C-Si C on (110) Si substrate by second order twins

Applied Physics Letters [AIP], Volume: 92 Issue: 22 Pages: 224102

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 619

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135

Massimo Camarda, Antonino La Magna, Francesco La Via

A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures

Journal of Computational Physics [Academic Press], Volume: 227 Issue: 2 Pages: 1075-1093

L Calcagno, G Izzo, G Litrico, G Foti, F La Via, G Galvagno, M Mauceri, S Leone

Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition

Journal of Applied Physics [AIP], Volume: 102 Issue: 4 Pages: 043523

A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Journal of Applied Physics [AIP], Volume: 102 Issue: 2 Pages: 023518

L Calcagno, A Ruggiero, P Musumeci, G Cuttone, F La Via, G Foti

Point defect production efficiency in ion irradiated 4H–SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 279-282

A Severino, A La Magna, R Anzalone, C Bongiorno, E Rimini, F La Via

Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films

Journal of applied physics [AIP], Volume: 101 Issue: 6 Pages: 063544

Danilo Crippa Francesco La Via, Stefano Leone, Marco Mauceri

Very high growth rate epitaxy processes with chlorine addition.

Materials Science Forum [], Pages: 157-160

Andrea Severino, DArrigo Giuseppe, Stefano Leone, Marco Mauceri, Giuseppe Abbondanza, Antonio Terrasi, Francesco La Via

Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates

ECS Transactions [The Electrochemical Society], Volume: 3 Issue: 5 Pages: 287-298

Francesco La Via, Giuseppa Galvagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Alessandro Veneroni, Maurizio Masi, Gian Luca Valente, Danilo Crippa

4H SiC epitaxial growth with chlorine addition

Chemical vapor deposition [WILEY‐VCH Verlag], Volume: 12 Issue: 8‐9 Pages: 509-515

FABRIZIO ROCCAFORTE, FRANCESCO LA VIA, VITO RAINERI

Then, some aspects concerning the formation of low resistance (10-10 Qcm”) ohmic

SiC Materials and Devices [World Scientific], Volume: 1 Pages: 77

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Effects of implantation defects on the carrier concentration of 6H-SiC

Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

SELECTED TOPICS IN ELECTRONICS AND SYSTEMS [WORLD SCIENTIFIC], Volume: 40 Pages: 77

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Drift mobility in 4H-SiC Schottky diodes

Applied Physics Letters [AIP], Volume: 87 Issue: 14 Pages: 142105

L Calcagno, A Ruggiero, F Roccaforte, F La Via

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics [AIP], Volume: 98 Issue: 2 Pages: 023713

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [AIP], Volume: 97 Issue: 12 Pages: 123502

A Alberti, R Fronterre, F La Via, E Rimini

Effect of a Ti cap layer on the diffusion of Co atoms during CoSi2 reaction

Electrochemical and solid-state letters [The Electrochemical Society], Volume: 8 Issue: 2 Pages: G47-G50

Fan Li, Valdas Jokubavicius, Michael R Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A Mawby, Francesco La Via

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 353-356

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 91-96

Nicolò Piluso, Alberto Campione, Simona Lorenti, Andrea Severino, Giuseppe Arena, Salvo Coffa, Francesco La Via

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 91-96

Cristiano Calabretta, Massimo Zimbone, Eric G Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via

Thermal Annealing of High Dose P Implantation in 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 399-402

Cristiano Calabretta, Massimo Zimbone, Eric G Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via

Thermal Annealing of High Dose P Implantation in 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 399-402

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 149-152

Philipp Schuh, Ulrike Künecke, Grazia Litrico, Marco Mauceri, Francesco La Via, Sylvain Monnoye, Marcin Zielinski, Peter J Wellmann

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 149-152

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Salvatore di Franco, Domenico Corso, Patrick Fiorenza, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489

Eric G Barbagiovanni, Alessandra Alberti, Corrado Bongiorno, Emanuele Smecca, Massimo Zimbone, Ruggero Anzalone, Grazia Litrico, Marco Mauceri, Antonino La Magna, Francesco La Via

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 346-349

Massimo Zimbone, Nicolo Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 357-360

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter J Wellmann, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918

Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 124-127

Nicolò Piluso, Andrea Severino, Ruggero Anzalone, Maria Ausilia di Stefano, Enzo Fontana, Marco Salanitri, Simona Lorenti, Alberto Campione, Patrick Fiorenza, Francesco La Via

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 84-87

Ruggero Anzalone, Nicolo Piluso, Grazia Litrico, Simona Lorenti, Giuseppe Arena, Salvatore Coffa, Francesco La Via

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 535-538

Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 15-18

Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 15-18

N Piluso, MA Di Stefano, S Lorenti, F La Via

4H-SiC defects evolution by thermal processes

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Grazia Litrico, Nicolò Piluso, Francesco La Via

Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Mojmír Meduňa, Thomas Kreiliger, Ivan Prieto, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

Stacking Fault Analysis of Epitaxial 3C-SiC on Si (001) Ridges

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 147-150

Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

3C-SiC Epitaxy on Deeply Patterned Si (111) Substrates

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 151-154

Enzo Fontana, Nicolò Piluso, Alfio Russo, Simona Lorenti, Cinzia M Marcellino, Salvatore Coffa, Francesco La Via

Ion implantation defects in 4H-SiC DIMOSFET

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 418-421

Ruggero Anzalone, Nicolò Piluso, Riccardo Reitano, Alessandra Alberti, Patrick Fiorenza, Marco Salanitri, Andrea Severino, Simona Lorenti, G Arena, Salvatore Coffa, Francesco La Via

Voids-free 3C-SiC/Si interface for high quality epitaxial layer

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 159-162

Philipp Schuh, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 89-92

Ruggero Anzalone, Marco Salanitri, Simona Lorenti, Alberto Campione, Nicolò Piluso, Francesco La Via, Patrick Fiorenza, Cinzia M Marcellino, G Arena, Salvatore Coffa

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 197-200

Stefania Privitera, Grazia Litrico, Massimo Camarda, Nicolò Piluso, Francesco La Via

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 380-383

Stefania Privitera, Vincenza Brancato, Donatella Spadaro, Ruggero Anzalone, Alessandra Alberti, Francesco La Via

3C-SiC Polycrystalline Films on Si for Photovoltaic Applications

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 189-192

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Francesco La Via

4H-SiC Defects Analysis by Micro Raman Spectroscopy

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 335-338

Stefania Privitera, Massimo Camarda, Nicolò Piluso, Ruggero Anzalone, Francesco La Via

Correlations between crystal quality and electrical properties by means of simultaneous photoluminescence and photocurrent analysis

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 257-260

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Silvia Scalese, Francesco La Via

Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si (001) heterostructures

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 21-25

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Francesco La Via

4H-SiC Defects Analysis by Micro Raman Spectroscopy

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 335-338

Ruggero Anzalone, Giuseppe D'Arrigo, Massimo Camarda, Nicolo’ Piluso, Francesco La Via

Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 11-14

Hans von Känel, Leo Miglio, Danilo Crippa, Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Ruggero Anzalone, Nicolo’ Piluso, Francesco La Via

Defect Reduction in Epitaxial 3C-SiC on Si (001) and Si (111) by Deep Substrate Patterning

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 193-196

Alberto Roncaglia, Ruggero Anzalone, Luca Belsito, Fulvio Mancarella, Massimo Camarda, Nicolo’ Piluso, Roberta Nipoti, Francesco La Via

Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 902-905

Ruggero Anzalone, Stefania Privitera, Alessandra Alberti, Nicolo’ Piluso, Patrick Fiorenza, Francesco La Via

Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC (001) for MOSFET Applications

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 773-776

Francesco La Via, Nicolo’ Piluso, Patrick Fiorenza, Marco Mauceri, Carmelo Vecchio, Antonino Pecora, Danilo Crippa

Epitaxial Growth on 150 mm 2° off Wafers

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 157-160

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Francesco La Via

Micro-Raman Characterization of 4H-SiC Stacking Faults

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 378-381

Marco Mauceri, Antonino Pecora, Grazia Litrico, Carmelo Vecchio, Marco Puglisi, Danilo Crippa, Nicolo’ Piluso, Massimo Camarda, Francesco La Via

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 121-124

Massimo Camarda, Stefania Privitera, Ruggero Anzalone, Nicolò Piluso, Patrick Fiorenza, Alessandra Alberti, Giovanna Pellegrino, Antonino La Magna, Francesco La Via, Carmelo Vecchio, Marco Mauceri, Grazia Litrico, Antonino Pecora, Danilo Crippa

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 95-98

Massimo Camarda, Antonino La Magna, Francesco La Via

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 238-242

Ruggero Anzalone, Giuseppe D'Arrigo, Massimo Camarda, Nicolo’ Piluso, Francesco La Via

Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-Membrane

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 457-460

Ruggero Anzalone, Massimo Camarda, Andrea Severino, Nicolo’ Piluso, Francesco La Via

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 255-258

Andrea Severino, Nicolò Piluso, Antonio Marino, Francesco La Via

Effects of Al ion implantation on 3C-SiC crystal structure

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 613-616

Andrea Canino, Andrea Severino, Nicolò Piluso, Francesco La Via, Stefania Privitera, Alessandra Alberti

3C-SiC growth on (001) Si substrates by using a multilayer buffer

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 263-266

Ruggero Anzalone, Massimo Camarda, Alessandro Auditore, Nicolò Piluso, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 301-305

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Andrea Severino, Ruggero Anzalone, Stefania Privitera, Antonino La Magna, Francesco La Via, Carmelo Vecchio, Marco Mauceri, Grazia Litrico, Antonino Pecora, Danilo Crippa

Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 229-234

Nicolò Piluso, Ruggero Anzalone, Andrea Severino, Andrea Canino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

Stress relaxation study in 3C-SiC microstructures by micro-Raman analysis and Finite element modeling

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 673-676

Francesco La Via, Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Marco Mauceri, Carmelo Vecchio, Danilo Crippa

Fast growth rate epitaxy by chloride precursors

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 167-172

Nicolò Piluso, R Anzalone, Massimo Camarda, A Severino, Giuseppe D'Arrigo, Antonino La Magna, F La Via

Micro-Raman analysis of a micromachined 3C-SiC cantilever

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 525-528

Ruggero Anzalone, M Camarda, C Locke, J Carballo, N Piluso, G D'Arrigo, A Severino, AA Volinsky, SE Saddow, F La Via

Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 521-524

Stefano Leone, Henrik Pedersen, Franziska Christine Beyer, Sven Andersson, Olof Kordina, Anne Henry, Andrea Canino, Francesco La Via, Erik Janzén

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 113-116

Massimo Camarda, Nicolò Piluso, Ruggero Anzalone, Antonino La Magna, Francesco La Via

Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 55-60

Andrea Severino, Ruggero Anzalone, Massimo Camarda, Nicolò Piluso, Francesco La Via

Structural characterization of heteroepitaxial 3C-SiC

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 27-30

Massimo Camarda, Ruggero Anzalone, Nicolò Piluso, Andrea Severino, Andrea Canino, Francesco La Via, Antonino La Magna

Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 517-520

Ruggero Anzalone, Giuseppe D'Arrigo, Massimo Camarda, Nicolò Piluso, Andrea Severino, Francesco La Via

Mechanical proprieties and residual stress evaluation on heteroepitaxial 3C-SiC/Si for MEMS application

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 51-54

Andrea Severino, Massimo Camarda, Antonino La Magna, Francesco La Via

Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates

Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 31-34

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Corrado Bongiorno, Andrea Severino, Vito Raineri, Antonino La Magna, Francesco La Via, Marco Mauceri, Giuseppe Abbondanza, Antonino Pecora, Danilo Crippa

Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 149-152

Massimo Camarda, Antonino La Magna, Francesco La Via

Evolution of extended defects during epitaxial growths: a Monte Carlo study

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 48-54

Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via

Raman study of bulk mobility in 3C-SiC heteroepitaxy

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 221-224

Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa

On the “step bunching” phenomena observed on etched and homoepitaxially grown 4H silicon carbide

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 358-361

Massimo Camarda, Ruggero Anzalone, Andrea Severino, Nicolò Piluso, Antonino La Magna, Francesco La Via

Complete determination of the local stress field in epitaxial thin films using single microstructure

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 213-216

Ruggero Anzalone, Massimo Camarda, Giuseppe D'Arrigo, Christopher Locke, Andrea Canino, Nicolò Piluso, Andrea Severino, Antonino La Magna, Stephen E Saddow, Francesco La Via

Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 133-136

Andrea Canino, Massimo Camarda, Francesco La Via

Reduction of the surface density of Single Shockley faults by TCS growth process

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 67-70

Nicolò Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 141-144

Nicolò Piluso, Andrea Severino, Massimo Camarda, Ruggero Anzalone, Andrea Canino, Giuseppe Condorelli, Giuseppe Abbondanza, Francesco La Via

Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 255-258

Ruggero Anzalone, Christopher Locke, J Carballo, Nicolò Piluso, Andrea Severino, Giuseppe D'Arrigo, AA Volinsky, Francesco La Via, Stephen E Saddow

Growth rate effect on 3C-SiC film residual stress on (100) Si substrates

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 143-146

Andrea Canino, Massimo Camarda, Francesco La Via

Single Shockley faults enlargement during micro-photoluminescence defects mapping

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 555-558

Massimo Camarda, Pietro Delugas, Andrea Canino, Andrea Severino, Nicolò Piluso, Antonino La Magna, Francesco La Via

Systematic first principles calculations of the effects of stacking fault defects on the 4H-SiC band structure

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 283-286

Ruggero Anzalone, Massimo Camarda, Daniel Alquier, M Italia, Andrea Severino, Nicolò Piluso, Antonino La Magna, Gaetano Foti, Christopher Locke, Stephen E Saddow, Alberto Roncaglia, Fulvio Mancarella, Antonella Poggi, Giuseppe D'Arrigo, Francesco La Via

Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 865-868

Giuseppe D'Arrigo, Andrea Severino, G Milazzo, Corrado Bongiorno, Nicolò Piluso, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Francesco La Via

3C-SiC heteroepitaxial growth on inverted silicon pyramids (ISP)

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 135-138

Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, Francesco La Via

A study of structural defects in 3C-SiC hetero-epitaxial films

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 371-374

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Study of the evolution of basal plane dislocations during epitaxial growth: role of the surface kinetics

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 539-542

Andrea Severino, Massimo Camarda, Nicolò Piluso, M Italia, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

Bow in 6 inch high-quality off-axis (111) 3C-SiC films

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 167-170

Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via

Compensation Effects in 7 MeV C Irradiated n-doped 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 619-622

Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via

Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 127-130

Gaetano Izzo, Grazia Litrico, Andrea Severino, Gaetano Foti, Francesco La Via, Lucia Calcagno

Defects in High Energy Ion Irradiated 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 397-400

Massimo Camarda, Antonino La Magna, Francesco La Via

Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 73-76

Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, M Italia, Giuseppe Abbondanza, Massimo Camarda, LMS Perdicaro, Giuseppe Condorelli, Marco Mauceri, Francesco La Via

Towards Large Area (111) 3C-SiC Films Grown on off-oriented (111) Si

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 149-152

Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E Saddow, Francesco La Via, Giuseppe D'Arrigo

Residual stress measurement on hetero-epitaxial 3C-SiC films

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 629-632

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: influence of process pressure

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 211-214

Andrea Severino, Corrado Bongiorno, Ruggero Anzalone, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Gaetano Foti, Francesco La Via

Void Formation in Differently Oriented Si in the Early Stage of SiC Growth

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 215-218

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 243-246

Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E Saddow

High quality single crystal 3C-SiC (111) films grown on Si (111)

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 145-148

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor at very high growth rate

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 123-126

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 135-138

Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa

Thick epitaxial layers growth by chlorine addition

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 55-60

Ruggero Anzalone, Andrea Severino, Christopher Locke, Davide Rodilosso, Cristina Tringali, Stephen E Saddow, Francesco La Via, Giuseppe D'Arrigo

3C-SiC Hetero-Epitaxial Films for Sensors Fabrication

Advances in Science and Technology [Trans Tech Publications], Volume: 54 Pages: 411-415

Maurizio Masi, Alessandro Veneroni, Alessandro Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Film morphology and process conditions in epitaxial silicon carbide growth via chlorides route

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 93-96

Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F Portuese, Gaetano Foti, Francesco La Via

Carbonization study of different silicon orientations

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 171-174

Lucia Calcagno, Gaetano Izzo, Grazia Litrico, G Galvagno, A Firrincieli, Salvatore di Franco, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, F Portuese, Giuseppe Abbondanza, Gaetano Foti, Francesco La Via

Optimisation of epitaxial layer growth with HCl addition by optical and electrical characterization

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 137-140

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Epitaxial layers grown with HCl addition: a comparison with the standard process

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 163-166

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Optimisation of epitaxial layer growth by Schottky diodes electrical characterization

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 199-202

Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 179-182

Fabrizio Roccaforte, Salvatore di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Silicon carbide: Defects and devices

Solid State Phenomena [Trans Tech Publications], Volume: 108 Pages: 663-670

R Pierobon, G Meneghesso, E Zanoni, Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Temperature stability of breakdown voltage on SiC power Schottky diodes with different barrier heights

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 933-936

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G Abbagnale, Alessandro Veneroni, Fabrizio Omarini, Laura Zamolo, Maurizio Masi, Fabrizio Roccaforte, G Giannazzo, Salvatore di Franco, Francesco La Via

New achievements on CVD based methods for SiC epitaxial growth

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 67-72

Francesco La Via, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, L Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 429-432

Alfonso Ruggiero, M Zimbone, Fabrizio Roccaforte, Sebania Libertino, Francesco La Via, Ricardo Reitano, Lucia Calcagno

Defect evolution in ion irradiated 6H-SiC epitaxial layers

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 485-488

Fabrizio Roccaforte, Filippo Giannazzo, Corrado Bongiorno, Sebania Libertino, Francesco La Via, Vito Raineri

Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 729-732

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio

Silicon Carbide and Related Materials 2015

[Trans Tech Publications Ltd],

Stephen Saddow, Francesco La Via

Advanced silicon carbide devices and processing

[BoD–Books on Demand],

Massimo Camarda, S Baldo, G Fisicaro, R Anzalone, S Scalese, A Alberti, F La Via, A La Magna, A Ballo, G Giustolisi, L Minafra, FP Cammarata, V Bravatà, GI Forte, G Russo, MC Gilardi

Study of the role of particle-particle dipole interaction in dielectrophoretic devices for biomarkers identification

Sensors [Springer, Cham], Pages: 9-12

Fabrizio Roccaforte, Vito Raineri, Francesco La Via, Mario Saggio, , Mario Saggio

Process for manufacturing a Schottky contact on a semiconductor substrate

US20060183267 [],